|
IRFU9020 |
IRFR9020 |
IRFR9022 |
IRFU9022 |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
| package instruction |
IN-LINE, R-PSIP-T3 |
SMALL OUTLINE, R-PSSO-G2 |
SMALL OUTLINE, R-PSSO-G2 |
IN-LINE, R-PSIP-T3 |
| Reach Compliance Code |
unknow |
compliant |
unknown |
unknow |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
| Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
| Minimum drain-source breakdown voltage |
50 V |
50 V |
50 V |
50 V |
| Maximum drain current (Abs) (ID) |
9.9 A |
9.9 A |
9 A |
9 A |
| Maximum drain current (ID) |
9.9 A |
9.9 A |
9 A |
9 A |
| Maximum drain-source on-resistance |
0.28 Ω |
0.28 Ω |
0.3 Ω |
0.3 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code |
TO-251AA |
TO-252AA |
TO-252AA |
TO-251AA |
| JESD-30 code |
R-PSIP-T3 |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSIP-T3 |
| JESD-609 code |
e0 |
e0 |
e0 |
e0 |
| Number of components |
1 |
1 |
1 |
1 |
| Number of terminals |
3 |
2 |
2 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
| Package form |
IN-LINE |
SMALL OUTLINE |
SMALL OUTLINE |
IN-LINE |
| Polarity/channel type |
P-CHANNEL |
P-CHANNEL |
P-CHANNEL |
P-CHANNEL |
| Maximum power dissipation(Abs) |
42 W |
42 W |
42 W |
42 W |
| Maximum pulsed drain current (IDM) |
40 A |
40 A |
36 A |
36 A |
| Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
| surface mount |
NO |
YES |
YES |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Terminal form |
THROUGH-HOLE |
GULL WING |
GULL WING |
THROUGH-HOLE |
| Terminal location |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
| Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
| Maker |
International Rectifier （ Infineon ） |
International Rectifier （ Infineon ） |
International Rectifier （ Infineon ） |
- |
| Base Number Matches |
- |
1 |
1 |
1 |
京公网安备 11010802033920号
EEWORLD
