SPICE MODELS: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C
BC856A - BC858C
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
Ideally Suited for Automatic Insertion
Complementary NPN Types Available (BC846-BC848)
For Switching and AF Amplifier Applications
Available in Lead Free/RoHS Compliant Version (Note 3)
C
B
C
A
SOT-23
Dim
A
B
C
B
TOP VIEW
E
E
D
G
H
K
J
L
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 3
Pin Connections: See Diagram
Marking Codes (See Table Below & Diagram on Page 3)
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
D
E
G
H
J
K
L
C
M
a
All Dimensions in mm
B
E
Marking Code (Note 2)
Type
BC856A
BC856B
BC857A
BC857B
Marking
3A, K3A
3B, K3B
3E, K3V, K3A
3F, K3W, K3B
Type
BC857C
BC858A
BC858B
BC858C
Marking
3G, K3G
3J, K3J, K3A, K3V
3K, K3K, K3B, K3W
3L, K3L, K3G
Maximum Ratings
Collector-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
CBO
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
300
417
-65 to +150
Unit
V
Characteristic
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qJA
T
j
, T
STG
V
V
mA
mA
mA
mW
°C/W
°C
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856.
3. No purposefully added lead.
DS11207 Rev. 15 - 2
1 of 4
www.diodes.com
BC856A-BC858C
ã
Diodes Incorporated
Electrical Characteristics
Characteristic
@ T
A
=25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
(BR)CBO
Min
-80
-50
-30
-65
-45
-30
-5
—
—
—
—
—
—
—
—
—
—
—
—
125
220
420
—
—
—
-600
—
—
—
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
1.5x10
-4
2x10
-4
3x10
-4
180
290
520
-75
-250
-700
-850
-650
—
—
—
—
—
—
200
3
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
250
475
800
-300
-650
—
-750
-820
-15
-15
-15
-15
-4.0
—
—
10
Unit
V
Test Condition
I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage (Note 4)
Collector-Emitter Breakdown Voltage (Note 4)
V
(BR)CEO
V
(BR)EBO
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
V
V
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
—
mV
mV
mV
nA
nA
nA
nA
µA
MHz
pF
dB
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
Emitter-Base Breakdown Voltage (Note 4)
H-Parameters
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
V
CE
= -5.0V, I
C
= -2.0mA,
f = 1.0kHz
DC Current Gain (Note 4)
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -80V
V
CE
= -50V
V
CE
= -30V
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5.0V, I
C
= 200µA,
R
S
= 2kW, f = 1kHz,
Df
= 200Hz
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Voltage (Note 4)
Collector-Cutoff Current (Note 4)
BC856
BC857
BC858
I
CES
I
CES
I
CES
I
CBO
I
CBO
f
T
C
CBO
NF
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DS11207 Rev. 15 - 2
2 of 4
www.diodes.com
BC856A-BC858C
Ordering Information
Device
BC85xx-7*
Notes:
5.
6.
(Note 5)
Packaging
SOT-23
Shipping
3000/Tape & Reel
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. *xx = device type, e.g. BC856A-7.
For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: BC856A-7-F.
Marking Information
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856A
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
YM
0.5
350
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
0.4
I
C
I
B
= 10
0.3
0.2
T
A
= 25°C
T
A
= 150°C
0.1
T
A
= -50°C
0
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
DS11207 Rev. 15 - 2
3 of 4
www.diodes.com
BC856A-BC858C
1000
h
FE
, DC CURRENT GAIN (NORMALIZED)
T
A
= 150°C
1000
100
T
A
= 25°C
T
A
= -50°C
f
t
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
V
CE
= 5V
100
10
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
DS11207 Rev. 15 - 2
4 of 4
www.diodes.com
BC856A-BC858C
Embedded System
京公网安备 11010802033920号
EEWORLD
