BC858A-13 datasheet, PDF - EEWORLD Datasheet

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BC858A-13: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryThe transistor; File Size65KB，4 Pages; ManufacturerDiodes Incorporated

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BC858A-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC858A-13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	125
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	5
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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SPICE MODELS: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C

BC856A - BC858C

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features

Ideally Suited for Automatic Insertion

Complementary NPN Types Available (BC846-BC848)

For Switching and AF Amplifier Applications

Available in Lead Free/RoHS Compliant Version (Note 3)

SOT-23

Dim

TOP VIEW

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Mechanical Data

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Also Available in Lead Free Plating (Matte Tin Finish

annealed over Alloy 42 leadframe). Please see Ordering

Information, Note 6, on Page 3

Pin Connections: See Diagram

Marking Codes (See Table Below & Diagram on Page 3)

Ordering & Date Code Information: See Page 3

Weight: 0.008 grams (approximate)

All Dimensions in mm

Marking Code (Note 2)

Type

BC856A

BC856B

BC857A

BC857B

Marking

3A, K3A

3B, K3B

3E, K3V, K3A

3F, K3W, K3B

Type

BC857C

BC858A

BC858B

BC858C

Marking

3G, K3G

3J, K3J, K3A, K3V

3K, K3K, K3B, K3W

3L, K3L, K3G

Maximum Ratings

Collector-Base Voltage

@ T

= 25°C unless otherwise specified

Symbol

BC856

BC857

BC858

BC856

BC857

BC858

CBO

Value

-80

-50

-30

-65

-45

-30

-5.0

-100

-200

300

417

-65 to +150

Unit

Characteristic

Collector-Emitter Voltage

CEO

EBO

qJA

, T

STG

°C/W

°C

Emitter-Base Voltage

Collector Current

Peak Collector Current

Peak Emitter Current

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Current gain subgroup “C” is not available for BC856.

3. No purposefully added lead.

DS11207 Rev. 15 - 2

1 of 4

www.diodes.com

BC856A-BC858C

Diodes Incorporated

BC858A-13 Related Products

	BC858A-13	BC856B-13	BC857A-13	BC858C-13	BC856A-13	BC858B-13
Description	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	65 V	45 V	30 V	65 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	125	220	125	420	125	220
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e0	e0	e0
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245	245	245	235	245	245
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	5	5	5	10	5	5
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

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