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IRGS6B60K

Description
INSULATED GATE BIPOLAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size290KB,14 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRGS6B60K Overview

INSULATED GATE BIPOLAR TRANSISTOR

IRGS6B60K Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)13 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Maximum landing time (tf)27 ns
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)90 W
Certification statusNot Qualified
Maximum rise time (tr)26 ns
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)258 ns
Nominal on time (ton)45 ns
Base Number Matches1
PD - 95644A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
C
IRGB6B60KPbF
IRGS6B60KPbF
IRGSL6B60KPbF
V
CES
= 600V
I
C
= 7.0A, T
C
=100°C
G
E
t
sc
> 10µs, T
J
=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.8V
TO-220AB
IRGB6B60K
D
2
Pak
IRGS6B60K
TO-262
IRGSL6B60K
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current

Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
13
7.0
26
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
‚
Junction-to-Ambient (PCB Mount, steady state)
ƒ
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
°C/W
g
www.irf.com
1
11/18/04

IRGS6B60K Related Products

IRGS6B60K IRGB6B60K
Description INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code D2PAK TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compliant
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 13 A 13 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE SINGLE
Maximum landing time (tf) 27 ns 27 ns
Gate emitter threshold voltage maximum 5.5 V 5.5 V
Gate-emitter maximum voltage 20 V 20 V
JESD-30 code R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 90 W 90 W
Certification status Not Qualified Not Qualified
Maximum rise time (tr) 26 ns 26 ns
surface mount YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 258 ns 258 ns
Nominal on time (ton) 45 ns 45 ns
Base Number Matches 1 1
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