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SSM3J05FU

Description
Power Management Switch High Speed Switching Applications
CategoryDiscrete semiconductor    The transistor   
File Size173KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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SSM3J05FU Overview

Power Management Switch High Speed Switching Applications

SSM3J05FU Parametric

Parameter NameAttribute value
Parts packaging codeSC-70
package instruction2-2E1E, USM, SC-70, 3 PIN
Contacts3
Reach Compliance Codeunknow
Other featuresLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance3.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SSM3J05FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J05FU
Power Management Switch
High Speed Switching Applications
·
·
·
Small package
Low on resistance : R
on
= 3.3
(max) (@V
GS
=
−4
V)
: R
on
= 4.0
(max) (@V
GS
=
−2.5
V)
Low gate threshold voltage
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
-20
±12
-200
-400
150
150
-55~150
Unit
V
V
mA
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
mW
°C
°C
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1E
Note 1: Mounted on FR4 board.
2
(25.4 mm
´
25.4 mm
´
1.6 t, Cu pad: 0.6 mm
´
3)
Weight: 0.006 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27

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