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IRHF53230

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size2MB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHF53230 Overview

Power Field-Effect Transistor,

IRHF53230 Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompliant
Base Number Matches1
PD-93788B
IRHF57230
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number Radiation Level
IRHF57230
IRHF53230
IRHF54230
IRHF58230
100 kRads(Si)
300 kRads(Si)
600 kRads(Si)
1000 kRads(Si)
200V, N-CHANNEL
R5
TECHNOLOGY
R
DS(on)
0.22
0.22
0.22
0.275
I
D
7.3A
7.3A
7.3A
7.3A
TO-39
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have been
characterized for Single Event Effects (SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm
2
)). The
combination of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Hermetically Sealed
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
7.3
4.5
29
25
0.2
± 20
110
7.3
2.5
7.0
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-04

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Reach Compliance Code compliant compliant compliant
Base Number Matches 1 1 -
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