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BUK9226-100B

Description
48A, 100V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size234KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUK9226-100B Overview

48A, 100V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3

BUK9226-100B Parametric

Parameter NameAttribute value
Parts packaging codeTO-252AA
package instructionPLASTIC, SC-63, TO-252, DPAK-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)147 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)34 A
Maximum drain current (ID)48 A
Maximum drain-source on-resistance0.029 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)192 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9226-100B
TrenchMOS™ logic level FET
M3D300
Rev. 01 — 10 December 2002
Objective data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very
low on-state resistance.
Product availability:
BUK9226-100B in SOT428 (D-PAK)
1.2 Features
s
TrenchMOS
TM
technology
s
175
°C
rated
s
Q101 compliant
s
Logic level compatible
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V, 24 V, and 42 V loads
s
General purpose power switching
1.4 Quick reference data
s
E
DS(AL)S
147 mJ
s
I
D
48 A
s
R
DSon
= 22 mΩ (typ)
s
P
tot
150 W
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Simplified outline
[1]
mb
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
d
g
s
MBB076
2
1
Top view
3
MBK091
SOT428 (D-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT428 package.
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