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HSMS-2810T30G

Description
Mixer Diode, Silicon
CategoryDiscrete semiconductor    diode   
File Size158KB,6 Pages
ManufacturerBroadcom
Environmental Compliance
Download Datasheet Parametric View All

HSMS-2810T30G Overview

Mixer Diode, Silicon

HSMS-2810T30G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBroadcom
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance1.2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Pulse input maximum power0.25 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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