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ISL6207

Description
4 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Categorysemiconductor    Analog mixed-signal IC   
File Size499KB,10 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

ISL6207 Overview

4 A HALF BRDG BASED MOSFET DRIVER, PDSO8

ISL6207 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-10 Cel
Maximum supply voltage 15.5 V
Minimum supply voltage 14.5 V
Rated supply voltage 15 V
On time0.0300 us
Processing package descriptionROHS COMPLIANT, plastic, SOIC-8
Lead-freeYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelother
high end driverYes
Interface TypeHalf-bridge FET driver
Rated output peak current limit4 A
ISL6207
DESIGNS
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contact our
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DATASHEET
FN9075
Rev 8.00
December 2, 2005
High Voltage Synchronous Rectified Buck MOSFET Driver
The ISL6207 is a high frequency, dual MOSFET driver,
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology in mobile
computing applications. This driver, combined with an Intersil
Multi-Phase Buck PWM controller, such as ISL6223, ISL6215,
and ISL6216, forms a complete single-stage core-voltage
regulator solution for advanced mobile microprocessors.
The ISL6207 features 4A typical sink current for the lower gate
driver. The 4A typical sink current is capable of holding the
lower MOSFET gate during the Phase node rising edge to
prevent the shoot-through power loss caused by the high dv/dt
of the Phase node. The operation voltage matches the 30V
breakdown voltage of the MOSFETs commonly used in mobile
computer power supplies.
The ISL6207 also features a three-state PWM input that,
working together with most of Intersil multiphase PWM
controllers, will prevent a negative transient on the output
voltage when the output is being shut down. This feature
eliminates the Schottky diode, that is usually seen in a
microprocessor power system for protecting the
microprocessor, from reversed-output-voltage damage.
The ISL6207 has the capacity to efficiently switch power
MOSFETs at frequencies up to 2MHz. Each driver is capable
of driving a 3000pF load with a 15ns propagation delay and
less than a 10ns transition time. This product implements
bootstrapping on the upper gate with an internal bootstrap
Schottky diode, reducing implementation cost, complexity,
and allowing the use of higher performance, cost effective
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 30V Operation Voltage
• 0.4 On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
- Fast Output Rise Time
- Short Propagation Delays
• Three-State PWM Input for Power Stage Shutdown
• Internal Bootstrap Schottky Diode
• QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel and AMD
®
Mobile
Microprocessors
• High Frequency Low Profile DC/DC Converters
• High Current Low Output Voltage DC/DC Converters
• High Input Voltage DC/DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for QFN Packages”
Pinouts
ISL6207 (SOIC-8)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 EN
6 VCC
5 LGATE
BOOT 1
PWM 2
3
GND
4
LGATE
6 EN
6
5 VCC
ISL6207 (QFN)
TOP VIEW
PHASE
7
UGATE
8
FN9075 Rev 8.00
December 2, 2005
Page 1 of 10
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