®
EMIF04-MMC02F1
IPAD
TM
4 LINES EMI FILTER
INCLUDING ESD PROTECTION
MAIN APPLICATION
MULTIMEDIACARD™
s
DESCRIPTION
The EMIF04-MMC02F1 is a highly integrated array
designed to suppress EMI / RFI noise for
MULTIMEDIACARD™ port filtering.
The EMIF04-MMC02F1 flip-chip packaging means
the package size is equal to the die size. That's
why EMIF04-MMC02F1 is a very small device.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.
BENEFITS
4 lines low-pass-filter
High efficiency in EMI filtering
Very low PCB space consuming: < 3.3 mm
2
Very thin package: 0.65 mm
High efficiency in ESD suppression
(IEC61000-4-2 level 4)
High reliability offered by monolithic integration
High reducing of parasitic elements through
integration & wafer level packaging.
s
s
s
s
s
s
s
Flip Chip package
PIN CONFIGURATION
A3
B3
C3
D3
A2
B2
C2
D2
B1
C1
D1
COMPLIES WITH THE FOLLOWING STANDARDS :
IEC 61000-4-2
Level 4:
15kV
8 kV
(air discharge)
(contact discharge)
on input & output pins.
MIL STD 883E - Method 3015-6 Class 3
TM
: IPAD is a trademark of STMicroelectronics.
September 2002 - Ed: 4A
1/6
EMIF04-MMC02F1
SCHEMATIC
R10
R20
C2
B2
A2
B1
C1
D1
A3
B3
C3
D3
R1
R2
R3
R4
D2
GND
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C)
Symbol
V
PP
T
j
T
op
T
stg
Parameter and test conditions
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
Junction temperature
Operating temperature range
Storage temperature range
Value
15
8
125
-40 to + 85
-55 to +150
Unit
kV
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C)
Symbol
V
BR
I
RM
V
RM
V
CL
Rd
I
PP
Parameter
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Dynamic impedance
Peak pulse current
2/6
EMIF04-MMC02F1
Symbol
V
BR
I
RM
C
line
R
1,
R
2
,R
3
,R
4
R
10
R
20
P
I
R
= 1 mA
V
RM
= 3V
@ 0V
Tolerance ± 5%
Tolerance ± 5%
Tolerance ± 5%
47
13
56
70
Test conditions
Min.
6
0.1
0.5
20
Typ.
Max.
Unit
V
µA
pF
Ω
kΩ
kΩ
mW
Fig. 1:
Filtering measurements
S21(dB) measurements of C3/C1 line
0.00
dB
-5.00
-10.00
Fig. 2:
Cross talk measurements
Xtalk measurements C3/B1
0.00
dB
-10.00
-20.00
-15.00
-20.00
-25.00
-30.00
-35.00
-60.00
-30.00
-40.00
-50.00
-40.00
-45.00
-50.00
1.0M
3.0M
10.0M
30.0M 100.0M 300.0M
f/Hz
1.0G
3.0G
-70.00
-80.00
1.0M
3.0M
10.0M
30.0M
100.0M 300.0M
f/Hz
1.0G
3.0G
Note:
spikes at high frequencies are induced by the PCB
layout.
Fig. 3:
Line capacitance versus reverse applied
voltage.
C(pF)
20
18
16
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
V
R
(V)
2.5
3.0
3.5
4.0
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
3/9
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