IRIS-A6331
Features
•
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
•
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
•
Low start-up circuit current (50uA max)
•
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
•
Avalanche energy guaranteed MOSFET with high VDSS
•
The built-in power MOSFET simplifies the surge absorption circuit since the
MOSFET guarantees the avalanche energy.
•
No VDSS de-rating is required.
•
Built-in constant voltage drive circuit
•
Various kinds of protection functions
•
Pulse-by-pulse Overcurrent Protection (OCP)
•
Overvoltage Protection with latch mode (OVP)
•
Thermal Shutdown with latch mode (TSD)
INTEGRATED SWITCHER
Package Outline
8 Lead PDIP
Key Specifications
Type
MOSFET
VDSS(V)
500
RDS(ON)
MAX
3.95
Ω
ACinput(V)
100/120
±
15%
Pout(W)
Note 1
10
Descriptions
IRIS-A6331
IRIS-A6331 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC
fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC
operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply
system reducing external components count and simplifying the circuit designs. (Note). PRC is
abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-A6331
1
2
3
4
8
7
6
5
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1
IRIS-A6331
Absolute Maximum Ratings (Ta=25℃) (Refer Gnd 2 and 5)
℃
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
I
Dpeak
I
DMAX
Definition
Drain Current
*1
Maximum switching current *5
Terminals Max. Ratings
8
3.54
8
3.54
Units
A
A
E
AS
Vin
Vth
P
D1
P
D2
T
F
Top
Tstg
Tch
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
8-1
3-2
4-2
8-1
3-2
-
-
-
-
32
35
6
1.35
0.14
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
mJ
V
V
W
W
℃
℃
℃
℃
Note
Single Pulse
V
1-2
=0.82V
Ta=-20~+125
℃
Single Pulse
V
DD
=99V,L=20mH
I
L
=2.1A
*6
Specified by
Vin
×
Iin
Refer to recommended
operating temperature
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive
voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop
occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by
V
1-2
in Fig.1 Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
Fig.1
V
1-2
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2
IRIS-A6331
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
Symbol
V
in(ON)
V
in(OFF)
I
in(ON)
I
in(OFF)
T
OFF(MAX)
Vth
I
OCP/FB
V
in(OVP)
I
in(H)
V
in(La.OFF)
Tj
(TSD)
Definition
Operation start voltage
Operation stop voltage
*7
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
O.C.P/F.B Pin threshold voltage
O.C.P/F.B Pin extraction current
O.V.P operation voltage
Latch circuit sustaining current *8
Latch circuit release voltage *7,8
Thermal shutdown operating temperature
MIN
15.8
9.1
-
-
12
0.7
0.7
23.2
-
7.9
135
Ratings
TYP
17.6
10.1
-
-
15
0.76
0.8
25.5
-
-
-
MAX
19.4
11.1
5
50
18
0.82
0.9
27.8
70
10.5
-
Units
V
V
mA
µA
µsec
V
mA
V
µA
V
℃
Test
Conditions
Vin=0
→
19.4V
Vin=19.4
→
9.1V
-
Vin=15V
-
-
-
Vin=0
→
27.8V
Vin=27.8
→
(Vin(OFF)-0.3)V
Vin=27.8
→
7.9V
-
*7 The relation of V
in(OFF)
＞V
in(La.OFF)
is applied for each product.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Symbol
V
DSS
I
DSS
Definition
Drain-to-Source breakdown voltage
Drain leakage current
MIN
500
-
-
-
*9
-
Ratings
TYP
-
-
-
-
-
MAX
-
300
3.95
250
52
Units
V
µA
Ω
nsec
℃
/W
Test Conditions
ID=300µA
V
2- 1
=0V(short)
V
DS
=500V
V
2- 1
=0V(short)
V
3- 2
=10V
I
D
=0.4A
R
DS(ON)
On-resistance
tf
Switching time
θ
ch-F
Thermal resistance
-
Between channel and
internal frame
*9 Internal frame temperature (T
F
) is measured at the root of the Pin 5.
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3
IRIS-A6331
IRIS-A6331
A.S.O. temperature derating coefficient curve
100
IRIS-A6331
MOSFET
A.S.O. Curve
100
A.S.O. temperature derating coefficient[%]
80
Drain Current ID[A]
10
Drain current
limit by ON
resistance
0.1ms
60
1
1ms
40
20
0.1
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0
0
20
40
60
80
100
120
0.01
1
10
100
1000
Drain-to-Source Voltage VDS[V]
Internal frame temperature TF [
℃]
IRIS-A6331
Maximum Switching current derating curve
Ta=‐
20½+125℃
4
100
IRIS-A6331
Avalanche energy derating curve
Maximum Switchng Current IDMAX[A]
3
E
AS
temperature derating coefficient [%]
0.8
0.9
1
V
1-2
[V]
1.1
1.2
80
60
2
40
1
20
0
0
25
50
75
100
℃
]
125
150
Channel temperature Tch [
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4
IRIS-A6331
IRIS-A6331
T
F
-P
D2
Curve for Control IC
0.16
IRIS-A6331
MOSFET Ta-PD1 Curve
1.6
1.4
1.2
Power dissipation PD1[W]
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta[
℃]
P
D1
=1.35[W]
P
D2
=0.14[W]
0.14
0.12
Power dissipation PD2[W]
0.1
0.08
0.06
0.04
0.02
0
0
20 40 60 80 100 120 140
Internal frame temperature TF[ ]
℃
IRIS-A6331
Transient thermal resistance curve
10
Transient thermal resistance
θch-a[
℃
/W]
1
0.1
0.01
1µ
10µ
100µ
time t [sec]
1m
10m
100m
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