Bulletin PD-20822 01/07
30BQ100GPbF
SCHOTTKY RECTIFIER
3 Amp
I
F(AV)
= 3.0Amp
V
R
= 100V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ t
p
= 5
μs
sine
V
F
T
J
@ 3.0 Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The 30BQ100GPbF surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Values
3.0
100
800
0.62
- 55 to 175
Case Styles
SMC
Document Number: 94506
www.vishay.com
1
30BQ100GPbF
Bulletin PD-20822 01/07
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
30BQ100GPbF
100
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
30BQ
3.0
4.0
Units Conditions
A
50% duty cycle @ T
L
= 148 °C, rectangular wave form
50% duty cycle @ T
L
= 138 °C, rectangular wave form
A
5μs Sine or 3μs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 1.0A, L = 6mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non Repetitive Avalanche Energy
Repetitive Avalanche Current
800
70
3.0
0.5
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
30BQ
0.79
0.90
0.62
0.70
Units Conditions
V
V
V
V
mA
mA
pF
nH
V/μs
@ 3A
@ 6A
@ 3A
@ 6A
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
(1) Pulse Width < 300μs, Duty Cycle < 2%
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
0.1
5.0
Max. Junction Capacitance
Typical Series Inductance
115
3.0
10000
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
(**)
46
°C/W DC operation
30BQ
- 55 to 175
12
Units
°C
°C
°C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 175
R
thJL
Max. Thermal Resistance
Junction to Lead
R
thJA
Max. Thermal Resistance
Junction to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
<
1
0.24 (0.008) g (oz.)
SMC
IR3JG
Similar to DO-214AB
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j-a)
(**) Mounted 1 inch square PCB
Document Number: 94506
www.vishay.com
2
30BQ100GPbF
Bulletin PD-20822 01/07
10
(mA)
10
1
0.1
0.01
0.001
0.0001
0
0
T = 175˚C
J
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
Reverse Current - I
(A)
R
20
40
60
80
100
1
Reverse Voltage - V
R
(V)
T
J
= 175˚C
T
J
= 125˚C
Junction Capacitance - C
T
(p F)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
T = 25˚C
J
T = 25˚C
J
100
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Max. Forward Voltage Drop
Characteristics (Per Leg)
10
1.2
0
20
40
60
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
100
(°C/W)
thJC
10
Thermal Impedance Z
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t1
t2
1
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
.
.
2. Peak Tj = Pdm x ZthJC + Tc
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
thJC
10
100
Fig. 4 - Max. Thermal Impedance Z
Characteristics (Per Leg)
Document Number: 94506
www.vishay.com
3
30BQ100GPbF
Bulletin PD-20822 01/07
180
Allowable Lead Temperature (°C)
Average Power Loss (Watts)
2.5
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
160
2
1.5
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS Limit
140
Square wave (D = 0.50)
80% Rated Vr applied
see note (2)
1
0.5
0
DC
120
100
0
1
2
3
4
5
Average Forward Current - I
F(AV)
(A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Non-Repetitive Surge Current - I
FSM
(A)
1000
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - T
p
(Microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Document Number: 94506
www.vishay.com
4
30BQ100GPbF
Bulletin PD-20822 01/07
Outline Table
Device Marking: IR3J
2.75 (.108)
3.15 (.124)
5.59 (.220)
6.22 (.245)
CATHODE
ANODE
6.60 (.260)
7.11 (.280)
.152 (.006)
.305 (.012)
2.00 (.079)
2.62 (.103)
.102 (.004)
0.76 (.030)
1.52 (.060)
7.75 (.305)
8.13 (.320)
.203 (.008)
1
2
1 POLARITY
2 PART NUMBER
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR3JG
SCHOTTKY GENERATION
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of th YEAR "standard product"
"P" = "Lead-Free"
Document Number: 94506
www.vishay.com
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