FDS9945
February 2001
FDS9945
60V N-Channel PowerTrench
®
MOSFET
General Description
These N Channel Logic Level MOSFET have been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
The MOSFET feature faster switching and lower gate
charge than other MOSFET with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
3.5 A, 60 V.
R
DS(ON)
= 0.100Ω @ V
GS
= 10 V
R
DS(ON)
= 0.200Ω @ V
GS
= 4.5V
•
Optimized for use in switching DC/DC converters
with PWM controllers
•
Very fast switching
•
Low gate charge.
D2
D
D2
D
D
D1
D1
D
5
6
7
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
G1
S1
G
G2
S
S2
S
8
1
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
60
±20
(Note 1a)
Units
V
V
A
W
3.5
10
2
1.6
1.0
-55 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
78 (steady state), 50 (10 sec)
135
40
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS9945
Device
FDS9945
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
FDS9945 Rev B(W)
FDS9945
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 48 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
60
Typ
Max Units
V
Off Characteristics
62.5
1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 3.5 A
V
GS
= 4.5V,
I
D
= 2.5 A
V
GS
= 10 V, I
D
=3.5A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 5V,
= V
DS
=30 V
I
D
= 3.5 A
1
2.5
–6
74
103
126
3
V
mV/°C
100
200
170
mΩ
I
D(on)
g
FS
10
8.6
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 30 V,
f = 1.0 MHz
V
GS
= 0 V,
420
48
20
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
7
4.3
19
3
14
8.6
34
6
13
ns
ns
ns
ns
nC
nC
nC
V
DS
= 30 V,
V
GS
= 5 V
I
D
= 3.5 A,
8
4
2.5
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 2.1 A
Voltage
2.1
(Note 2)
A
V
0.8
1.2
a) 78°/W when
mounted on a 0.5in
2
pad of 2 oz copper
b) 125°/W when
mounted on a 0.02
in
2
pad of 2 oz
copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS9945 Rev B(W)
FDS9945
Typical Characteristics
20
2.2
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
6.0V
5.0V
2
V
GS
= 4.0V
1.8
1.6
4.5V
1.4
1.2
1
0.8
5.0V
6.0V
10V
I
D
, DRAIN CURRENT (A)
15
4.5V
10
4.0V
5
0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
3
6
9
12
15
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
R
DS(ON)
ON-RESISTANCE (OHM)
,
2
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
o
I
D
= 3.5A
V
GS
= 10V
I
D
= 1.75A
0.2
T
A
= 125 C
0.15
o
0.1
T
A
= 25 C
0.05
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
o
125
150
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature.
10
25 C
125 C
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
I
S
, REVERSE DRAIN CURRENT (A)
V
D S
= 5V
I
D
, DRAIN CURRENT (A)
8
T
A
= -55 C
o
V
GS
= 0V
o
1
T
A
= 125 C
0.1
25 C
0.01
-55 C
0.001
o
o
o
6
4
2
0
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9945 Rev B(W)
FDS9945
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 3.5A
8
CAPACITANCE (pF)
40V
6
V
D S
= 20V
30V
600
500
C
ISS
400
300
200
C
OSS
100
C
RSS
0
0
4
8
Q
g
, GATE CHARGE (nC)
12
16
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
f = 1MHz
V
GS
= 0 V
4
2
0
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
100µs
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
1ms
10ms
1
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
o
40
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
30
100ms
1s
DC
10s
20
0.1
10
1
10
100
0
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
R
θJA
(t) = r(t) + R
θJA
R
θJ
A
= 135 °C/W
P(pk)
0.02
0.01
t
1
t
2
0.01
SINGLE PULSE
T
J
- T
A
= P * R
θJ
A
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9945 Rev B(W)
SOIC-8 Tape and Reel Data
SOIC(8lds) Packaging
Configuration:
Figure 1.0
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
TION
A
TTEN
ATTENTION
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Embossed ESD Marking
Antistatic Cover Tape
ONS
ECAUTI
VE PR
LING
OBSER
R
HAND
TATIC
FO TROS
ELEC ITIVE
SENS CES
DEVI
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
TNR
2,500
13" Dia
355x333x40
5,000
0.0774
0.6060
L86Z
Rail/Tube
95
-
530x130x83
30,000
0.0774
-
F011
TNR
4,000
13" Dia
355x333x40
8,000
0.0774
0.9696
D84Z
TNR
500
7" Dia
193x183x80
2,000
0.0774
0.1182
F852
NDS
9959
Pin 1
SOIC-8 Unit Orientation
Barcode Label
Barcode
Label
355mm x 333mm x 40mm
Intermediate container for 13” reel option
F63TNR Label sample
Barcode
Label
193mm x 183mm x 80mm
Pizza Box for Standard Option
SOIC(8lds) Tape Leader and Trailer
Configuration:
Figure 2.0
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
D/C1: Z 9842AB
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
©2001 Fairchild Semiconductor Corporation
January 2001, Rev. C
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