MBM29PL64LM datasheet, PDF - EEWORLD Datasheet

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MBM29PL64LM: DescriptionFlash Memory 64 M (8M X 8/4M X 16) BIT; File Size359KB，69 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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MBM29PL64LM Overview

Flash Memory 64 M (8M X 8/4M X 16) BIT

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SPANSION Flash Memory

Data Sheet

September 2003

This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and

Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

these products will be offered to customers of both AMD and Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a SPANSION

revisions will occur when appropriate, and changes will be noted in a revision summary.

product. Future routine

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these

products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about SPANSION

solutions.

memory

MBM29PL64LM

90/10

(Continued)

The standard MBM29PL64LM offers access times of 90 ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE),

and output enable (OE) controls.

The MBM29PL64LM supports command set compatible with JEDEC single-power-supply EEPROMS standard.

Commands are written into the command register. The register contents serve as input to an internal state-

machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and

data needed for the programming and erase operations. Reading data out of the devices is similar to reading

from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29PL64LM is programmed by executing the program command sequence. This will invoke the Em-

bedded Program Algorithm

which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will

invoke the Embedded Erase Algorithm

which is an internal algorithm that automatically preprograms the array

if it is not already programmed before executing the erase operation. During erase, the device automatically

times the erase pulse widths and verifies proper cell margin.

The device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

. Once the end of a program or erase cycle has been completed, the devices

internally return to the read mode.

Fujitsu Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The devices electrically erase all bits within a sector simulta-

neously via hot-hole assisted erase. The words are programmed one word at a time using the EPROM program-

ming mechanism of hot electron injection.

MBM29PL64LM Related Products

	MBM29PL64LM	MBM29PL64LM10	MBM29PL64LM90TN	MBM29PL64LM90PCN	MBM29PL64LM90PBT	MBM29PL64LM10TN	MBM29PL64LM10PCN	MBM29PL64LM10PBT	MBM29PL64LM90
Description	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT	Flash Memory 64 M (8M X 8/4M X 16) BIT
Is it Rohs certified?	-	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Parts packaging code	-	-	TSOP1	TSOP1	BGA	TSOP1	TSOP1	BGA	-
package instruction	-	-	PLASTIC, TSOP1-48	PLASTIC, TSOP1-56	PLASTIC, FBGA-80	PLASTIC, TSOP1-48	PLASTIC, TSOP1-56	TFBGA, BGA80,8X12,32	-
Contacts	-	-	48	56	80	48	56	80	-
Reach Compliance Code	-	-	compli	compli	compli	compli	compli	compli	-
ECCN code	-	-	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	-
Maximum access time	-	-	90 ns	90 ns	90 ns	100 ns	100 ns	100 ns	-
Spare memory width	-	-	8	8	8	8	8	8	-
JESD-30 code	-	-	R-PDSO-G48	R-PDSO-G56	R-PBGA-B80	R-PDSO-G48	R-PDSO-G56	R-PBGA-B80	-
JESD-609 code	-	-	e0	e0	e0	e0	e0	e0	-
length	-	-	18.4 mm	18.4 mm	11 mm	18.4 mm	18.4 mm	11 mm	-
memory density	-	-	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi	-
Memory IC Type	-	-	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	-
memory width	-	-	16	16	16	16	16	16	-
Number of functions	-	-	1	1	1	1	1	1	-
Number of terminals	-	-	48	56	80	48	56	80	-
word count	-	-	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	-
character code	-	-	4000000	4000000	4000000	4000000	4000000	4000000	-
Operating mode	-	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	-	-	70 °C	70 °C	70 °C	85 °C	85 °C	85 °C	-
Minimum operating temperature	-	-	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C	-
organize	-	-	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	-
Package body material	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	-	-	TSOP1	TSOP1	TFBGA	TSOP1	TSOP1	TFBGA	-
Package shape	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	-	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	-
Parallel/Serial	-	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-
Peak Reflow Temperature (Celsius)	-	-	240	240	240	240	240	240	-
Programming voltage	-	-	3 V	3 V	3 V	3 V	3 V	3 V	-
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
Maximum seat height	-	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-
Maximum supply voltage (Vsup)	-	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	-	-	3 V	3 V	3 V	3 V	3 V	3 V	-
Nominal supply voltage (Vsup)	-	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-
surface mount	-	-	YES	YES	YES	YES	YES	YES	-
technology	-	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-
Temperature level	-	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	OTHER	OTHER	OTHER	-
Terminal surface	-	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-
Terminal form	-	-	GULL WING	GULL WING	BALL	GULL WING	GULL WING	BALL	-
Terminal pitch	-	-	0.5 mm	0.5 mm	0.8 mm	0.5 mm	0.5 mm	0.8 mm	-
Terminal location	-	-	DUAL	DUAL	BOTTOM	DUAL	DUAL	BOTTOM	-
Maximum time at peak reflow temperature	-	-	30	30	30	30	30	30	-
type	-	-	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	-
width	-	-	12 mm	14 mm	7 mm	12 mm	14 mm	7 mm	-
Base Number Matches	-	-	1	1	1	-	1	1	-

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