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HAF2012-90STR

Description
20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size231KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

HAF2012-90STR Overview

20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3

HAF2012-90STR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeSC-83
package instructionSC-83, LDPAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website:
http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to
http://www.renesas.com/inquiry.

HAF2012-90STR Related Products

HAF2012-90STR HAF2012-90S HAF2012-90L
Description 20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
Is it lead-free? Contains lead Lead free Contains lead
Is it Rohs certified? incompatible conform to incompatible
package instruction SC-83, LDPAK-3 SMALL OUTLINE, R-PSSO-G2 LDPAK-3
Contacts 3 3 3
Reach Compliance Code unknown compliant unknown
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 20 A 20 A 20 A
Maximum drain current (ID) 20 A 20 A 20 A
Maximum drain-source on-resistance 0.065 Ω 0.065 Ω 0.065 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
Number of components 1 1 1
Number of terminals 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 225 NOT SPECIFIED 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 50 W
Maximum pulsed drain current (IDM) 40 A 40 A 40 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES NO
Terminal form GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker Renesas Electronics Corporation Renesas Electronics Corporation -
Parts packaging code SC-83 SC-83 -
Humidity sensitivity level 1 - 1
Base Number Matches 1 1 -

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