EEWORLDEEWORLDEEWORLD

Part Number

Search

HAF2012-90S

Description
20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size231KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

HAF2012-90S Overview

20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3

HAF2012-90S Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSC-83
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website:
http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to
http://www.renesas.com/inquiry.

HAF2012-90S Related Products

HAF2012-90S HAF2012-90STR HAF2012-90L
Description 20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 20A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
Is it lead-free? Lead free Contains lead Contains lead
Is it Rohs certified? conform to incompatible incompatible
package instruction SMALL OUTLINE, R-PSSO-G2 SC-83, LDPAK-3 LDPAK-3
Contacts 3 3 3
Reach Compliance Code compliant unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 20 A 20 A 20 A
Maximum drain current (ID) 20 A 20 A 20 A
Maximum drain-source on-resistance 0.065 Ω 0.065 Ω 0.065 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
Number of components 1 1 1
Number of terminals 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 225 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 50 W
Maximum pulsed drain current (IDM) 40 A 40 A 40 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES NO
Terminal form GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker Renesas Electronics Corporation Renesas Electronics Corporation -
Parts packaging code SC-83 SC-83 -
Base Number Matches 1 1 -
Humidity sensitivity level - 1 1
MSP430F149+PCF8563 RTC clock is inaccurate
[i=s] This post was last edited by jiayouhan2011 on 2014-7-21 17:21 [/i] Hello everyone: I use MSP430F149+PCF8563. After setting the initial time, I simulate online and print out the actual PC time an...
jiayouhan2011 Microcontroller MCU
How to understand big-endian and little-endian memory systems
As the title says: How should I understand big-endian and little-endian storage systems?...
9043075 Embedded System
When writing a program in ABEL language, what tool is used to generate JED file?
How to write a program in ABEL language? What tool can be used to generate JED files and write programs for GAL16V8?...
Jonsen_yang Embedded System
Does anyone have experience in implementing the PPP protocol on the μC/OS-II operating system? Could you please give me some guidance? I would greatly appreciate it!
Does anyone have experience in implementing PPP protocol on μC/OS-II operating system? Can you give me some guidance? I will reward you handsomely! It's really urgent. Please help me. I will be gratef...
liyanping Embedded System
"Practice together in 2021" + continue to persevere
2020 is an extraordinary year, with both gains and losses 2020 is a confusing year. I have been thinking about where my future will go. I have experienced pain and depression. 2020 was a dull year. I ...
清欢渡 Talking
[TI recommended course] #[High Precision Laboratory] Magnetic Sensor Technology#
//training.eeworld.com.cn/TI/show/course/5475...
EricCheng TI Technology Forum

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1752  2650  2258  2253  1109  36  54  46  23  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号