Advance Technical Information
GigaMOS
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK170N20T
IXFX170N20T
R
DS(on)
≤
t
rr
≤
TO-264 (IXFK)
V
DSS
I
D25
=
=
200V
170A
11mΩ
Ω
200ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
L(RMS)
I
DM
I
A
E
AS
P
D
dV/dt
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
External Lead Current Limit
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
Maximum Ratings
200
200
±
20
±
30
170
160
470
40
3
1150
20
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
J
W
V/ns
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
G
D
S
(TAB)
PLUS247 (IXFX)
(TAB)
Features
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
(PLUS247)
300
260
1.13/10
20..120 /4.5..27
10
6
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 60A, Note 1
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
200
2.5
5.0
±
200
V
V
nA
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
50
μA
3 mA
11 mΩ
© 2009 IXYS CORPORATION, All rights reserved
DS100131(03/09)
IXFK170N20T
IXFX170N20T
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min.
Typ.
Max.
85
140
19.6
1870
135
33
28
80
22
265
86
67
0.13
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
°C/W
°C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 (IXFK) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 60A, V
GS
= 0V, Note 1
I
F
= 80A, -di/dt = 100A/μs
V
R
= 75V, V
GS
= 0V
0.59
9.80
Characteristic Values
Min.
Typ.
Max.
170
680
1.3
200
A
A
V
ns
μC
A
PLUS 247
TM
(IXFX) Outline
Note 1:
Pulse Test, t
≤
300μs; Duty Cycle, d
≤
2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFK170N20T
IXFX170N20T
Fig. 1. Output Characteristics
@ 25ºC
180
160
140
250
120
7V
V
GS
= 10V
8V
7V
350
300
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
100
80
60
200
150
6V
100
6V
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
5V
50
5V
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
180
160
140
V
GS
= 10V
8V
7V
3.0
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 85A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
120
100
80
60
6V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
D
= 170A
I
D
= 85A
5V
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 85A Value
vs. Drain Current
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0
50
100
150
200
250
300
350
T
J
= 25ºC
V
GS
= 10V
180
160
T
J
= 175ºC
140
120
100
80
60
40
20
0
-50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R
DS(on)
- Normalized
I
D
- Amperes
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2009 IXYS CORPORATION, All rights reserved
IXYS REF:F_170N20T(9W)3-23-09
IXFK170N20T
IXFX170N20T
Fig. 7. Input Admittance
160
140
120
100
80
60
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T
J
= 150ºC
25ºC
-40ºC
280
T
J
= - 40ºC
240
200
Fig. 8. Transconductance
g
f s
- Siemens
25ºC
I
D
- Amperes
160
120
80
40
0
0
20
40
60
80
100
120
140
160
150ºC
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
8
250
7
10
9
V
DS
= 100V
I
D
= 85A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 150ºC
T
J
= 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
200
150
100
50
0
6
5
4
3
2
1
0
0
40
80
120
160
200
240
280
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
R
DS(on)
Limit
Ciss
25µs
Capacitance - PicoFarads
I
D
- Amperes
10,000
100
100µs
Coss
1,000
10
T
J
= 175ºC
Crss
T
C
= 25ºC
Single Pulse
1
0
5
10
15
20
25
30
35
40
1
10
1ms
100
100
1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK170N20T
IXFX170N20T
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z
(th )J C
- ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All rights reserved
IXYS REF:F_170N20T(9W)3-23-09
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