EEWORLDEEWORLDEEWORLD

Part Number

Search

BYW51-150

Description
4A, 150V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size24KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

BYW51-150 Overview

4A, 150V, SILICON, RECTIFIER DIODE

BYW51-150 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
applicationULTRA FAST RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation20 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BYW51-100, BYW51-150, BYW51-200
June 1995
File Number 1412.2
8A, 100V - 200V Ultrafast Dual Diodes
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (t
RR
< 35ns). They use a planar
ion-implanted epitaxial construction.
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-width-
modulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize elec-
trical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
Features
• Ultra Fast Recovery Time (<35ns)
• Low Forward Voltage
• Low Thermal Resistance
• Planar Design
• Wire-Bonded Construction
Applications
• General Purpose
• Power Switching Circuits to 100kHz
• Full-Wave Rectification
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
BYW51-100
BYW51-150
BYW51-200
PACKAGE
TO-220AB
TO-220AB
TO-220AB
BRAND
BYW51100
BYW51150
BYW51200
Package
JEDEC TO-220AB
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A1
A2
Absolute Maximum Ratings
Per Junction
BYW51-100
BYW51-150
150
165
100
20
8
100
20
-40 + 150
260
BYW51-200
200
220
100
20
8
100
20
-40 + 150
260
UNITS
V
V
A
A
A
A
W
o
C
o
C
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . V
RRM
Maximum Peak Surge Voltage . . . . . . . . . . . . . . . . . . . . . . V
RSM
Repetitive Peak Surge Current. . . . . . . . . . . . . . l
FRM
, t
P
< 10µs
Nonrepetitive Peak Surge Current . . . . . . . . . . . . l
F
(RMS), Total
Average Rectified forward Current . . . . . . . . . . . . . . l
F(AV)
, Total
T
C
= +125
o
C, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . l
FSM
t
P
= 10ms, Sinusoidal
Maximum Power Dissipation . . . . . . . . . . . . . . P
D
, T
C
= +125
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T
J
T
L
(Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance >
1
/
8
in. (3.17mm) From Case For 10s max.
100
110
100
20
8
100
20
-40 + 150
260
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

BYW51-150 Related Products

BYW51-150 BYW51-100
Description 4A, 150V, SILICON, RECTIFIER DIODE 4A, 100V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible
Reach Compliance Code not_compliant not_compliant
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 0.95 V
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 100 A 100 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 20 W 20 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 150 V 100 V
Maximum reverse current 5 µA 5 µA
Maximum reverse recovery time 0.035 µs 0.035 µs
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1079  1323  2520  22  2807  22  27  51  1  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号