Rev3: Nov 2004
AOD410, AOD410L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD410 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AOD410L( Green Product ) is offered in
a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 8A
R
DS(ON)
< 65mΩ (V
GS
= 10V)
R
DS(ON)
< 105mΩ (V
GS
= 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
B
Maximum
30
±20
8
6
20
8
10
25
12.5
2.1
1.33
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
20
46
5.3
Max
30
60
7
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD410, AOD410L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=2A
Forward Transconductance
V
DS
=5V, I
D
=8A
I
S
=1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8A
T
J
=125°C
1
10
48
76
75
6.2
0.75
1
4.3
288
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
57
39
3
6.72
V
GS
=10V, V
DS
=15V, I
D
=8A
3.34
0.76
1.78
3.7
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=8A, dI/dt=100A/µs
I
F
=8A, dI/dt=100A/µs
2
Min
30
Typ
Max
Units
V
1
5
100
1.8
3
65
100
105
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
3.7
15.6
2.6
12.6
5.1
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the
user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD410, AOD410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10V
8V
5V
6V
4.5V
8
V
DS
=5V
10
15
I
D
(A)
10
3.5V
5
V
GS
=3V
0
0
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
I
D
(A)
4
4V
6
125°C
25°C
2
0
1.5
2
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
2.5
4.5
100
90
R
DS(ON)
(m
Ω
)
80
70
60
50
40
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
175
150
125
R
DS(ON)
(m
Ω
)
100
I
D
=8A
125°C
I
S
(A)
Normalized On-Resistance
V
GS
=4.5V
2
1.8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=8A
V
GS
=4.5V
V
GS
=10V
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
75
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER M
1.0E-04
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZ
50
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
1.0E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25
0.0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
20
46
5.3
0.2
0.4
7
1.2
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOD410, AOD410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=8A
8
Capacitance (pF)
V
GS
(Volts)
500
400
C
iss
300
6
4
200
C
oss
100
C
rss
2
0
0
1
4
5
6
7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
3
8
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100.0
30
T
J(Max)
=150°C
T
A
=25°C
10.0
I
D
(Amps)
R
DS(ON)
limited
100µs
10ms
0.1s
1.0
T
J(Max)
=150°C
T
A
=25°C
1s
10s
DC
0
0.001
Power (W)
1ms
10µs
20
10
0.01
0.1
1
10
100
1000
0.1
0.1
10
V
DS
(Volts) Biased Safe
Figure 9: Maximum Forward
Operating Area (Note F)
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER M
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZ
Single Pulse
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
20
46
5.3
P
D
T
on
7
T
100
1000
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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