Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 3 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 50 |
| JESD-30 code | R-PDSO-G4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 3 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| VCEsat-Max | 0.5 V |
| Base Number Matches | 1 |
| BDP949-E6433 | BDP949-E6327 | BDP947-E6433 | BDP947-E6327 | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon |
| Maker | SIEMENS | SIEMENS | SIEMENS | SIEMENS |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 3 A | 3 A | 3 A | 3 A |
| Collector-emitter maximum voltage | 60 V | 60 V | 45 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 50 | 50 | 50 | 50 |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Maximum power consumption environment | 3 W | 3 W | 3 W | 3 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.5 V | 0.5 V | 0.5 V | 0.5 V |
| Base Number Matches | 1 | 1 | 1 | 1 |
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