5962L8771002VPA amplifier basic information:
5962L8771002VPA is an OPERATIONAL AMPLIFIER. Commonly used packaging methods are CERAMIC, DIP-8
5962L8771002VPA amplifier core information:
The minimum operating temperature of the 5962L8771002VPA is -55 °C and the maximum operating temperature is 125 °C. Maximum bias current at 25°C: 0.06 µA Maximum average bias current is 0.001 µA
How to simply check the efficiency of an amplifier? Looking at its slew rate, the nominal slew rate of 5962L8771002VPA is 0.5 V/us. Its minimum voltage gain is 25000. When the op amp is used in closed loop, at a certain closed-loop gain (usually 1 or 2, 10, etc.), the frequency when the gain of 5962L8771002VPA becomes 0.707 times the low-frequency gain is 1000 kHz. The power of 5962L8771002VPA is NO. Its programmable power is NO.
The nominal supply voltage of 5962L8771002VPA is 5 V, and its corresponding nominal negative supply voltage is. The input offset voltage of 5962L8771002VPA is 4000 µV (Input offset voltage: the compensation voltage between the two input terminals required to make the output terminal of the operational amplifier 0V (or close to 0V).) The width of 5962L8771002VPA is: 7.62 mm.
Related dimensions of 5962L8771002VPA:
5962L8771002VPA has 8 terminals. Its terminal position type is: DUAL. Terminal pitch is 2.54 mm. Total pins: 8
5962L8771002VPA amplifier additional information:
5962L8771002VPA adopts the VOLTAGE-FEEDBACK architecture. It is not a low-bias amplifier. It does not belong to the low offset class of amplifiers. The frequency compensation status of 5962L8771002VPA is: YES. Its temperature grade is: MILITARY.
It is not a micropower amplifier. The corresponding JESD-30 code is: R-GDIP-T8. The corresponding JESD-609 code is: e0. The packaging code of 5962L8771002VPA is: DIP. The materials used in the 5962L8771002VPA package are mostly CERAMIC and GLASS-SEALED.
The package shape is RECTANGULAR. The 5962L8771002VPA package pin format is: IN-LINE. Its terminal form is: THROUGH-HOLE. The maximum seat height is 5.08 mm.
5962L8771002VPA amplifier basic information:
5962L8771002VPA is an OPERATIONAL AMPLIFIER. Commonly used packaging methods are CERAMIC, DIP-8
5962L8771002VPA amplifier core information:
The minimum operating temperature of the 5962L8771002VPA is -55 °C and the maximum operating temperature is 125 °C. Maximum bias current at 25°C: 0.06 µA Maximum average bias current is 0.001 µA
How to simply check the efficiency of an amplifier? Looking at its slew rate, the nominal slew rate of 5962L8771002VPA is 0.5 V/us. Its minimum voltage gain is 25000. When the op amp is used in closed loop, at a certain closed-loop gain (usually 1 or 2, 10, etc.), the frequency when the gain of 5962L8771002VPA becomes 0.707 times the low-frequency gain is 1000 kHz. The power of 5962L8771002VPA is NO. Its programmable power is NO.
The nominal supply voltage of 5962L8771002VPA is 5 V, and its corresponding nominal negative supply voltage is. The input offset voltage of 5962L8771002VPA is 4000 µV (Input offset voltage: the compensation voltage between the two input terminals required to make the output terminal of the operational amplifier 0V (or close to 0V).) The width of 5962L8771002VPA is: 7.62 mm.
Related dimensions of 5962L8771002VPA:
5962L8771002VPA has 8 terminals. Its terminal position type is: DUAL. Terminal pitch is 2.54 mm. Total pins: 8
5962L8771002VPA amplifier additional information:
5962L8771002VPA adopts the VOLTAGE-FEEDBACK architecture. It is not a low-bias amplifier. It does not belong to the low offset class of amplifiers. The frequency compensation status of 5962L8771002VPA is: YES. Its temperature grade is: MILITARY.
It is not a micropower amplifier. The corresponding JESD-30 code is: R-GDIP-T8. The corresponding JESD-609 code is: e0. The packaging code of 5962L8771002VPA is: DIP. The materials used in the 5962L8771002VPA package are mostly CERAMIC and GLASS-SEALED.
The package shape is RECTANGULAR. The 5962L8771002VPA package pin format is: IN-LINE. Its terminal form is: THROUGH-HOLE. The maximum seat height is 5.08 mm.
| Parameter Name | Attribute value |
| Maker | National Semiconductor(TI ) |
| Parts packaging code | DIP |
| package instruction | CERAMIC, DIP-8 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Amplifier type | OPERATIONAL AMPLIFIER |
| Architecture | VOLTAGE-FEEDBACK |
| Maximum average bias current (IIB) | 0.001 µA |
| Maximum bias current (IIB) at 25C | 0.06 µA |
| Nominal Common Mode Rejection Ratio | 70 dB |
| frequency compensation | YES |
| Maximum input offset voltage | 4000 µV |
| JESD-30 code | R-GDIP-T8 |
| JESD-609 code | e0 |
| low-bias | NO |
| low-dissonance | NO |
| micropower | NO |
| Negative supply voltage upper limit | |
| Nominal Negative Supply Voltage (Vsup) | |
| Number of functions | 2 |
| Number of terminals | 8 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP8,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| power | NO |
| power supply | +-1.5/+-15/3/30 V |
| Programmable power | NO |
| Certification status | Not Qualified |
| Filter level | MIL-PRF-38535 Class V |
| Maximum seat height | 5.08 mm |
| Nominal slew rate | 0.5 V/us |
| Supply voltage upper limit | 32 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | BIPOLAR |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| total dose | 50k Rad(Si) V |
| Nominal Uniform Gain Bandwidth | 1000 kHz |
| Minimum voltage gain | 25000 |
| broadband | NO |
| width | 7.62 mm |
| Base Number Matches | 1 |
| 5962L8771002VPA | 5962L8771002QGA | LM158J-MPR | LM158AWGLQML | LM158MDS | LM158MW8 | 5962L8771002QPA | LM158AJ-MLS | |
|---|---|---|---|---|---|---|---|---|
| Description | IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Operational Amplifier | IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier | IC DUAL OP-AMP, 7000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier | IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDSO10, CERAMIC, SOIC-10, Operational Amplifier | IC DUAL OP-AMP, 7000 uV OFFSET-MAX, 1 MHz BAND WIDTH, UUC, DIE, Operational Amplifier | IC DUAL OP-AMP, 7000 uV OFFSET-MAX, 1 MHz BAND WIDTH, UUC, WAFER, Operational Amplifier | IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Operational Amplifier | IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier |
| Parts packaging code | DIP | BCY | DIP | SOIC | WAFER | WAFER | DIP | DIP |
| package instruction | CERAMIC, DIP-8 | METAL CAN, TO-5, 8 PIN | DIP, | SOP, SOP10,.4 | DIE, DIE OR CHIP | DIE, WAFER | DIP, DIP8,.3 | DIP, DIP8,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | compli | unknown | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Amplifier type | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| Maximum average bias current (IIB) | 0.001 µA | 0.1 µA | 0.3 µA | 0.1 µA | 0.3 µA | 0.3 µA | 0.001 µA | 0.1 µA |
| Nominal Common Mode Rejection Ratio | 70 dB | 85 dB | 85 dB | 85 dB | 85 dB | 85 dB | 70 dB | 85 dB |
| Maximum input offset voltage | 4000 µV | 4000 µV | 7000 µV | 4000 µV | 7000 µV | 7000 µV | 4000 µV | 4000 µV |
| JESD-30 code | R-GDIP-T8 | O-MBCY-W8 | R-GDIP-T8 | R-GDSO-G10 | X-XUUC-N | X-XUUC-N | R-GDIP-T8 | R-GDIP-T8 |
| Number of functions | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Package body material | CERAMIC, GLASS-SEALED | METAL | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | UNSPECIFIED | UNSPECIFIED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | TO-5 | DIP | SOP | DIE | DIE | DIP | DIP |
| Package shape | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | UNSPECIFIED | UNSPECIFIED | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | CYLINDRICAL | IN-LINE | SMALL OUTLINE | UNCASED CHIP | UNCASED CHIP | IN-LINE | IN-LINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Nominal slew rate | 0.5 V/us | 0.5 V/us | 0.5 V/us | 0.5 V/us | 0.5 V/us | 0.5 V/us | 0.5 V/us | 0.5 V/us |
| Supply voltage upper limit | 32 V | 32 V | 32 V | 32 V | 32 V | 32 V | 32 V | 32 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | YES | YES | YES | NO | NO |
| technology | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal form | THROUGH-HOLE | WIRE | THROUGH-HOLE | GULL WING | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | BOTTOM | DUAL | DUAL | UPPER | UPPER | DUAL | DUAL |
| Nominal Uniform Gain Bandwidth | 1000 kHz | 1000 kHz | 1000 kHz | 1000 kHz | 1000 kHz | 1000 kHz | 1000 kHz | 1000 kHz |
| Maker | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | - |
| Contacts | 8 | 8 | 8 | 10 | - | - | 8 | 8 |
| Architecture | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | - | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK |
| Maximum bias current (IIB) at 25C | 0.06 µA | 0.06 µA | - | 0.06 µA | 0.05 µA | 0.05 µA | 0.05 µA | 0.05 µA |
| frequency compensation | YES | YES | - | YES | YES | YES | YES | YES |
| JESD-609 code | e0 | e0 | - | e0 | - | - | e0 | e0 |
| low-dissonance | NO | NO | - | NO | NO | NO | NO | NO |
| Number of terminals | 8 | 8 | 8 | 10 | - | - | 8 | 8 |
| Encapsulate equivalent code | DIP8,.3 | CAN8,.2 | - | SOP10,.4 | DIE OR CHIP | WAFER | DIP8,.3 | DIP8,.3 |
| power supply | +-1.5/+-15/3/30 V | +-16 V | - | +-1.5/+-15/3/30 V | +-1.5/+-15/3/30 V | +-1.5/+-15/3/30 V | +-16 V | +-1.5/+-15/3/30 V |
| Filter level | MIL-PRF-38535 Class V | MIL-STD-883 | - | MIL-STD-883 | 38535V;38534K;883S | MIL-STD-883 | MIL-PRF-38535 Class V | 38535V;38534K;883S |
| Maximum seat height | 5.08 mm | - | 5.08 mm | 2.33 mm | - | - | 5.08 mm | 5.08 mm |
| Terminal surface | TIN LEAD | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn63Pb37) |
| Terminal pitch | 2.54 mm | - | 2.54 mm | 1.27 mm | - | - | 2.54 mm | 2.54 mm |
| Minimum voltage gain | 25000 | 25000 | - | 25000 | 25000 | 25000 | 25000 | 25000 |
| width | 7.62 mm | - | 7.62 mm | 6.12 mm | - | - | 7.62 mm | 7.62 mm |
| Is it Rohs certified? | - | incompatible | - | incompatible | conform to | conform to | incompatible | incompatible |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 |
| Maximum slew rate | - | 4 mA | - | 4 mA | 2 mA | 2 mA | 4 mA | 4 mA |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | 40 | NOT SPECIFIED | NOT SPECIFIED |