LC SIDELED
®
Low Current LED
LS A679, LY A679, LG A679
Besondere Merkmale
q
q
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Gehäusefarbe: weiß
als optischer Indikator einsetzbar
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
für alle SMT-Bestück- und Reflow-Löttechniken geeignet
gegurtet (12-mm-Filmgurt)
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q
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color of package: white
for use as optical indicator
for backlighting, optical coupling into light pipes and lenses
suitable for all SMT assembly and reflow soldering methods
available taped on reel (12 mm tape)
Typ
Emissions-
farbe
Color of
Emission
Type
Farbe der
Lichtaustritts-
fläche
Color of the
Light Emitting
Area
colorless clear
colorless clear
colorless clear
Lichtstärke
Lichtstrom
Bestellnummer
Luminous
Intensity
I
F
= 2 mA
I
V
(mcd)
≥
0.25
(1.0 typ.)
≥
0.25
(1.0 typ.)
≥
0.25
(1.0 typ.)
Luminous
Flux
I
F
= 2 mA
Φ
V
(mlm)
3.0 (typ.)
3.0 (typ.)
3.0 (typ.)
Ordering Code
LS A679-CO
LY A679-CO
LG A679-CO
super-red
yellow
green
Q62703-Q2551
Q62703-Q2554
Q62703-Q2545
Streuung der Lichtstärke in einer Verpackungseinheit
I
V max
/
I
V min
≤
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
≤
2.0.
Semiconductor Group
1
1998-11-12
VPL06880
Features
LS A679, LY A679, LG A679
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
Stoßstrom
Surge current
t
≤
10
µs,
D
= 0.005
Sperrspannung
Reverse voltage
Verlustleistung
Power dissipation
Symbol Werte
Symbol Values
Einheit
Unit
˚C
˚C
˚C
mA
A
T
op
T
stg
T
j
I
F
I
FM
– 55 ... + 100
– 55 ... + 100
+ 100
7.5
0.15
V
R
P
tot
5
20
500
V
mW
K/W
Wärmewiderstand
R
th JA
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-Board (Padgröße
≥
16 mm
2
)
mounted on PC board (pad size
≥
16 mm
2
)
Semiconductor Group
2
1998-11-12
LS A679, LY A679, LG A679
Kennwerte
(
T
A
= 25
°C)
Characteristics
Bezeichnung
Parameter
Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
I
F
= 7.5 mA
Dominantwellenlänge (typ.)
Dominant wavelength (typ.)
I
F
= 7.5 mA
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 7.5 mA
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
Durchlaßspannung (typ.)
Forward voltage (max.)
I
F
= 2 mA
Sperrstrom (typ.)
Reverse current (max.)
V
R
= 5 V
Kapazität (typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 % (typ.)
I
V
from 90 % to 10 % (typ.)
I
F
= 100 mA,
t
p
= 10
µs,
R
L
= 50
Ω
Symbol
Symbol
LS
λ
peak
635
Werte
Values
LY
586
LG
565
nm
Einheit
Unit
λ
dom
628
590
570
nm
∆λ
45
45
25
nm
2ϕ
120
1.8
2.6
0.01
10
3
120
2.0
2.7
0.01
10
3
120
1.9
2.6
0.01
10
15
Grad
deg.
V
V
µA
µA
pF
V
F
V
F
I
R
I
R
C
0
t
r
t
f
200
150
200
150
450
200
ns
ns
Semiconductor Group
3
1998-11-12
LS A679, LY A679, LG A679
Relative spektrale Emission
I
rel
=
f
(λ),
T
A
= 25 ˚C,
I
F
= 7.5 mA
Relative spectral emission
V (λ) = spektrale Augenempfindlichkeit
Standard eye response curve
100
%
Ι
rel
80
OHL01698
V
λ
60
pure-green
green
orange
super-red
red
20
0
400
450
500
550
yellow
40
600
650
hyper-red
blue
nm
700
λ
Abstrahlcharakteristik
I
rel
=
f
(ϕ)
Radiation characteristic
40˚
30˚
20˚
10˚
0˚
OHL01660
ϕ
1.0
50˚
0.8
0.6
60˚
0.4
70˚
0.2
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
0
Semiconductor Group
4
1998-11-12
LS A679, LY A679, LG A679
Durchlaßstrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 ˚C
10
2
OHL01208
Relative Lichtstärke
I
V
/
I
V(2 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 ˚C
10
1
Ι
V
Ι
V(2mA)
10
0
OHL01207
Ι
F
mA
10
1
5
super-red
green
yellow
5
10
-1
5
green
yellow
super-red
10
0
5
10
-2
5
10
-1
1.0
1.4
1.8
2.2
2.6
3.0 V 3.4
V
F
10
-3
10
-1
5 10
0
5
10
1
mA 10
Ι
F
2
Zulässige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
Duty cycle
D
= parameter,
T
A
= 25 ˚C
10
3
OHL01278
Maximal zulässiger Durchlaßstrom
I
F
=
f
(
T
A
)
Max. permissible forward current
8
OHL01193
Ι
F
mA
t
P
t
D
=
P
T
D
= 0.005
0.01
0.02
0.05
0.1
0.2
0.5
Ι
F
T
Ι
F
mA
6
5
4
3
10
2
5
10
1
5
DC
2
1
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10 s 10
t
p
0
1
0
0
20
40
60
80 ˚C 100
T
A
Semiconductor Group
5
1998-11-12
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