Rev 2: Nov 2004
AO6604, AO6604L ( Green Product )
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6604 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
AO6604L( Green Product ) is offered in a lead-free
package.
Features
n-channel
p-channel
-20V
V
DS
(V) = 20V
-2.5A
I
D
= 3.4A
R
DS(ON)
< 60mΩ
< 110mΩ (V
GS
= 4.5V)
< 75mΩ
< 140mΩ (V
GS
= 2.5V)
< 100mΩ
< 200mΩ (V
GS
= 1.8V)
D1
TSOP6
Top View
G1
S2
G2
1 6
2 5
3 4
D1
S1
D2
G1
S1
G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
20
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
±8
3.4
2.7
15
1.15
0.73
-55 to 150
Max p-channel
-20
±8
-2.5
-2.0
-15
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
N-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=3.4A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=2.5V, I
D
=3A
V
GS
=1.8V, I
D
=2A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=3.4A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
0.4
15
46
63
57
72
10
0.76
1
2
436
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
66
44
3
6.2
V
GS
=4.5V, V
DS
=10V, I
D
=3.4A
1.6
0.5
5.5
V
GS
=5V, V
DS
=10V, R
L
=3Ω,
R
GEN
=3Ω
I
F
=3.4A, dI/dt=100A/µs
6.3
40
12.7
12.3
3.5
16
4
8.1
570
60
80
75
100
0.6
Min
20
1
5
100
1
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=3.4A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6604,
AO6604L
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
10
8V
4.5V
8
2V
I
D
(A)
3V
2.5V
6
4
4
V
GS
=1.5V
2
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
V
DS
(Volts)
Fig 1: On-Region Characteristics
100
Normalized On-Resistance
1.8
V
GS
=2.5V
1.6
1.4
1.2
1
0.8
0
4
8
12
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
I
S
(A)
I
D
=3.4A
1E-01
1E-02
25°C
1E-03
1E+01
1E+00
125°C
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=1.8V
I
D
=3.4A
V
GS
=4.5V
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
0
V
DS
=5V
12
I
D
(A)
8
80
R
DS(ON)
(m
Ω
)
V
GS
=1.8V
60
V
GS
=2.5V
40
V
GS
=4.5V
20
Alpha & Omega Semiconductor, Ltd.
AO6604,
AO6604L
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=10V
I
D
=3.4A
800
Capacitance (pF)
600
C
iss
400
200
C
oss
C
rss
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
10.0
R
DS(ON)
limited
0.1s
1.0
1s
10s
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10ms
100µs
20
T
J(Max)
=150°C
T
A
=25°C
15
Power (W)
1ms
10µs
I
D
(Amps)
10
5
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
P-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-2.5A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-2.5V, I
D
=-2A
V
GS
=-1.8V, I
D
=-1A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=-5V, I
D
=-3A
4
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
-0.3
-15
86
116
113
151
6
-0.78
-1
-2
540
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
72
49
12
6.1
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2.5A
0.6
1.6
10
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.9Ω,
R
GEN
=3Ω
I
F
=-2.5A, dI/dt=100A/µs
12
44
22
21
7.5
28
15.6
8
700
110
145
140
200
-0.55
Min
-20
-1
-5
±100
-1
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2.5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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