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AO6604

Description
Complementary Enhancement Mode Field Effect Transistor
File Size192KB,7 Pages
ManufacturerETC
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AO6604 Overview

Complementary Enhancement Mode Field Effect Transistor

Rev 2: Nov 2004
AO6604, AO6604L ( Green Product )
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6604 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
AO6604L( Green Product ) is offered in a lead-free
package.
Features
n-channel
p-channel
-20V
V
DS
(V) = 20V
-2.5A
I
D
= 3.4A
R
DS(ON)
< 60mΩ
< 110mΩ (V
GS
= 4.5V)
< 75mΩ
< 140mΩ (V
GS
= 2.5V)
< 100mΩ
< 200mΩ (V
GS
= 1.8V)
D1
TSOP6
Top View
G1
S2
G2
1 6
2 5
3 4
D1
S1
D2
G1
S1
G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
20
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
±8
3.4
2.7
15
1.15
0.73
-55 to 150
Max p-channel
-20
±8
-2.5
-2.0
-15
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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AO6604 AO6604L
Description Complementary Enhancement Mode Field Effect Transistor Complementary Enhancement Mode Field Effect Transistor
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