AO7600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO7600 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch, an
inverter, and for a host of other
applications. Both devices are ESD
protected.
Standard Product AO7600 is
Pb-free (meets ROHS & Sony 259
specifications). AO7600L is a Green
Product ordering option. AO7600 and
AO7600L are electrically identical.
SC-70-6
(SOT-323)
Top View
S1
G1
D2
D1
G2
S2
Features
n-channel
V
DS
(V) = 20V
I
D
= 0.9A (V
GS
=4.5V)
p-channel
-20V
-0.6A (V
GS
=-4.5V)
R
DS(ON)
R
DS(ON)
< 300mΩ (V
GS
=4.5V)
< 550mΩ (V
GS
=-4.5V)
< 350mΩ (V
GS
=2.5V)
< 700mΩ (V
GS
=-2.5V)
< 450mΩ (V
GS
=1.8V)
< 950mΩ (V
GS
=-1.8V)
D1
D2
G
S1
G
S2
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
20
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
±8
0.9
0.7
5
0.3
0.19
-55 to 150
Max p-channel
-20
±8
-0.6
-0.48
-3
0.3
0.19
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
360
400
300
360
400
300
Max Units
415 °C/W
460 °C/W
350 °C/W
415
460
350
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO7600
N-Channel: Electrical Characteristics (T =25°C unless otherwise noted)
J
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=0.9A
T
J
=125°C
0.5
5
181
253
237
317
2.6
0.69
300
330
350
450
1
0.4
101
17
14
3
1.57
0.13
0.36
3.2
4
15.5
2.4
6.7
1.6
8.1
120
0.75
Min
20
1
5
25
0.9
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
V
GS
=2.5V, I
D
=0.75A
V
GS
=1.8V, I
D
=0.7A
V
DS
=5V, I
D
=0.8A
Forward Transconductance
Diode Forward Voltage
I
S
=0.5A,V
GS
=0V
Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
t
D(off)
t
f
t
rr
Q
rr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
4
1.9
V
GS
=4.5V, V
DS
=10V, I
D
=0.8A
V
GS
=5V, V
DS
=10V, R
L
=12.5Ω,
R
GEN
=6Ω
I
F
=0.8A, dI/dt=100A/µs
2
Body Diode Reverse Recovery Charge I
F
=0.8A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7600
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
4V
I
D
(A)
I
D
(A)
6
4
2
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
480
Normalized On-Resistance
440
400
R
DS(ON)
(m
Ω
)
360
320
280
240
200
160
0
1
2
3
4
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
500
460
420
R
DS(ON)
(m
Ω
)
380
I
S
(A)
340
300
260
220
180
140
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
0.0
0.4
0.8
1.2
1.6
2.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
I
D
=0.9A
1E-01
1E-02
25°C
1E-03
1E-04
1E+01
1E+00
125°C
V
GS
=2.5V
V
GS
=1.8V
1.8
V
GS
=1.8V
1.6
1.4
V
GS
=4.5V
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
I
D
=0.9A
V
GS
=2.5V
I
D
=0.75A
I
0 7A
3.5V
3V
2.5V
V
GS
=2V
1
4
10V
8V
5V
3
V
DS
=5V
25°C
125°C
2
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=4.5V
Alpha & Omega Semiconductor, Ltd.
AO7600
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=10V
I
D
=0.9A
Capacitance (pF)
200
150
C
iss
100
C
oss
50
C
rss
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10.0
T
J(Max)
=150°C, T
A
=25°C
R
DS(ON)
limited
10ms
0.1s
100µs
1ms
Power (W)
10µs
16
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
1.0
12
8
0.1
1s
10s
DC
4
0.0
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=415°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO7600
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-0.6A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-2.5V, I
D
=-0.5A
V
GS
=-1.8V, I
D
=-0.4A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=-5V, I
D
=-0.6A
Diode Forward Voltage
I
S
=-0.5A,V
GS
=0V
Maximum Body-Diode Continuous Current
-0.5
-3
415
542
590
700
1.7
-0.86
-1
-0.4
114
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
17
14
12
1.44
V
GS
=-4.5V, V
DS
=-10V, I
D
=-0.6A
0.14
0.35
6.5
V
GS
=-4.5V, V
DS
=-10V, R
L
=16.7Ω,
R
GEN
=3Ω
I
F
=-0.6A, dI/dt=100A/µs
I
F
=-0.6A, dI/dt=100A/µs
6.5
18.2
5.5
10
3
13
17
1.8
140
550
700
700
950
-0.6
Min
-20
-1
-5
±10
-0.9
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the
≤≤
10s thermal resistance rating.
given application depends on the user's specific board design. The current rating is based on the t t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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