AP9928EO
Advanced Power
Electronics Corp.
▼
Low on-resistance
▼
Capable of 2.5V gate drive
▼
Optimal DC/DC battery application
D2
S2
G2
S2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S1
D1
G1
S1
20V
23mΩ
5A
TSSOP-8
I
D
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current , V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
3
Rating
20
±12
5
3.5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
125
Unit
℃/W
Data and specifications subject to change without notice
200206031
AP9928EO
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
21
-
-
-
15.9
1.5
7.4
6.2
9
30
11
530
245
125
Max. Units
-
-
23
29
-
-
1
25
±10
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=20V, V
GS
=0V
V
DS
=20V ,V
GS
=0V
V
GS
=±12V
I
D
=5A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω,V
GS
=4.5V
R
D
=10Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V,V
S
=1.2V
T
j
=25℃,I
S
=5A,V
GS
=0V
Min.
-
-
Typ.
-
-
Max. Units
0.83
1.2
A
V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
AP9928EO
30
30
4.5V
3.5V
3.0V
2.5V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
20
20
4.5V
3.5V
3.0V
2.5V
V
GS
=2.0V
10
V
GS
=2.0V
10
T
C
=25
o
C
0
0
1
2
3
4
0
0
1
2
3
T
C
=150
o
C
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
95
1.9
I
D
= 5A
T
C
=25
o
C
1.5
I
D
= 5A
V
GS
= 4.5V
Normalized R
DS(ON)
65
R
DS(ON)
(m
Ω
)
1.1
35
0.7
5
1
2
3
4
5
6
0.3
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP9928EO
6
1.2
5
0.9
I
D
, Drain Current (A)
4
P
D
(W)
25
50
75
100
125
150
3
0.6
2
0.3
1
0
0
0
50
100
150
T
c
, Case Temperature ( C)
o
T
c
, Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
10
100us
1ms
10ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
0.05
I
D
(A)
1
0.02
0.01
100ms
0.1
P
DM
0.01
Single Pulse
t
T
1s
T
C
=25 C
Single Pulse
0.01
o
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=208
o
C/W
DC
0.001
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9928EO
f=1.0MHz
8
10000
I
D
=5A
7
V
GS
, Gate to Source Voltage (V)
6
5
4
C (pF)
V
DS
=10V
V
DS
=15V
V
DS
=20V
1000
Ciss
Coss
Crss
100
3
2
1
0
0
5
10
15
20
25
10
1
7
13
19
25
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
1.6
10
1.2
I
S
(A)
V
GS(th)
(V)
T
j
=150
o
C
1
T
j
=25
o
C
0.8
0.1
0.4
0.01
0.2
0.5
0.8
1.1
0
-50
0
50
100
150
Junction Temperature ( C )
V
SD
(V)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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