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BC846AWR

Description
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3
CategoryDiscrete semiconductor    The transistor   
File Size417KB,2 Pages
ManufacturerCentral Semiconductor
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BC846AWR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3

BC846AWR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.275 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC846W SERIES
BC847W SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC846W and
BC847W Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini
TM
surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
Cob
fT
NF
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
BC847W
50
45
BC846W
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
5.0
100
200
200
275
-65 to +150
455
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=30V
VCB=30V, TA=150°C
VEB=5.0V
IC=10μA (BC847W)
IC=10μA (BC846W)
IC=10mA (BC847W)
IC=10mA (BC846W)
IE=10μA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=2.0mA, VCE=5.0V
IC=10mA, VCE=5.0V
VCB=10V, IE=0, f=1.0MHz
VCE=5.0V, IC=10mA, f=100MHz
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
otherwise noted)
MIN
MAX
15
5.0
100
50
80
45
65
5.0
0.25
0.60
0.70
0.77
3.0
0.58
100
10
BC846BW
BC847BW
MIN
MAX
200
450
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
pF
MHz
dB
hFE
VCE=5.0V, IC=2.0mA
BC846AW
BC847AW
MIN
MAX
110
220
BC847CW
MIN
MAX
420
800
R1 (20-November 2009)

BC846AWR Related Products

BC846AWR BC846BWR BC847BWR BC847AWR BC847CWBK BC847CWR BC847CWTR
Description Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SUPERMINI-3
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 PLASTIC, SUPERMINI-3 PLASTIC, SUPERMINI-3 SMALL OUTLINE, R-PDSO-G3 PLASTIC, SUPERMINI-3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant compliant not_compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 65 V 65 V 45 V 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 110 200 200 110 420 420 420
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Is it lead-free? Contains lead Contains lead Contains lead Contains lead - Contains lead -
Is it Rohs certified? incompatible incompatible incompatible incompatible - incompatible -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -
Maximum power dissipation(Abs) 0.275 W 0.275 W 0.275 W 0.275 W - 0.275 W -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -

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