Advance Product Information
June 8, 2005
DC - 12 GHz Discrete power pHEMT
•
•
•
•
•
•
•
•
TGF2021-01
Key Features and Performance
Frequency Range: DC - 12 GHz
> 30 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
1mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 75-125mA
(U
nder RF Drive, Id rises from 75mA to 240mA)
Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
Product Description
The TriQuint TGF2021-01 is a discrete
1 mm pHEMT which operates from
DC-12 GHz. The TGF2021-01 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2021-01 typically provides
> 30 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-01
appropriate for high efficiency
applications.
The TGF2021-01 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2021-01 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
Primary Applications
•
•
•
•
•
35
30
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Maximum Gain (dB)
25
MSG
20
15
10
5
0
0
2
4
6
8
10
12
14
16
MAG
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
Advance Product Information
June 8, 2005
TABLE I
MAXIMUM RATINGS
Symbol
V
+
V
-
I
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
3/
TGF2021-01
Value
12.5 V
-5V to 0V
470 mA
7 mA
25 dBm
See note 3
150
°C
320
°C
-65 to 150
°C
2/
2/ 3/
4/
2/
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Notes
2/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
.
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
°C
– TBASE
°C)
/ 86.5 (°C/W)
Junction operating temperature will directly affect the device median time to failure
(T
M
). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
4/
TABLE II
DC PROBE CHARACTERISTICS
(T
A
= 25
qC,
Nominal)
Symbol
Idss
Gm
V
P
V
BGS
V
BGD
Parameter
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
Minimum
-
-
-1.5
-30
-30
Typical
300
375
-1
-
-
Maximum
-
-
-0.5
-14
-14
Unit
mA
mS
V
V
V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
Advance Product Information
June 8, 2005
TABLE III
RF CHARACTERIZATION TABLE
1/
(T
A
= 25
°C,
Nominal)
SYMBOL
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/
Efficiency Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
30.8
50
11
26.6
0.464
0.527
∠
148.0
31.5
48
11
31.9
0.496
TGF2021-01
PARAMETER
Vd = 10V
Idq = 75mA
Vd = 12V
Idq = 75mA
UNITS
dBm
%
dB
Ω
pF
-
0.539
∠
141.0
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
30
59
11.5
49.0
0.539
30.7
55
11
55.6
0.505
0.643
∠
126.3
dBm
%
dB
Ω
pF
-
Load Reflection coefficient
0.642
∠
130.6
Γ
L
3/
1/ Values in this table are taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
TABLE IV
THERMAL INFORMATION
Parameter
θ
JC
Thermal Resistance
(channel to backside of carrier)
Test Conditions
Vd = 12 V
Idq = 75 mA
Pdiss = 0.9 W
T
CH
(
o
C)
148
T
JC
(qC/W)
86.5
T
M
(HRS)
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
Advance Product Information
June 8, 2005
TGF2021-01
Measured Fixtured Data
Power tuned data at 10GHz
33
32
31
30
29
28
27
26
25
24
23
22
21
20
11
320
300
280
260
240
220
200
180
160
140
120
100
80
60
18
19
20
21
22
23
24
12
11
10
9
72
66
60
54
42
36
30
Vd=12V, Id=75mA
Vd=10V, Id=75mA
Vd=12V, Id=75mA
Vd=10V, Id=75mA
Pout (dBm)
Gain (dB)
Id (mA)
7
6
5
4
3
2
1
0
11
12
13
14
15
16
17
18
19
20
21
22
23
24
‘
24
18
12
6
0
12
13
14
15
16
17
Input Power (dBm)
Input Power (dBm)
For power tuned devices at 10GHz
Input matched for maximum gain & output load is:
Vd=12V, Idq=75mA: Rp = 31.9
Ω,
Cp = 0.477pF,
Γ
= 0.54,
θ
= 141°
Vd=10V, Idq=75mA: Rp = 26.6
Ω,
Cp = 0.464pF,
Γ
= 0.53,
θ
= 148°
Efficiency tuned data at 10GHz
33
32
31
30
29
28
27
26
25
24
23
22
21
20
11
12
320
300
280
260
240
220
200
180
160
140
120
100
80
60
16
17
18
19
20
21
22
23
24
Vd=12V, Id=75mA
Vd=10V, Id=75mA
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
11
12
13
14
15
16
17
18
19
Vd=12V, Id=75mA
Vd=10V, Id=75mA
60
56
52
48
44
40
36
32
28
24
20
16
12
8
4
0
24
Pout (dBm)
Gain (dB)
Id (mA)
13
14
15
20
21
22
23
Input Power (dBm)
Input Power (dBm)
For efficiency tuned devices at 10GHz:
Input matched for maximum gain & output load is:
Vd=12V, Idq=75mA: Rp = 55.6
Ω,
Cp = 0.505pF,
Γ
= 0.96,
θ
= 113°
Vd=10V, Idq=75mA: Rp = 49.0
Ω,
Cp = 0.539pF,
Γ
= 0.64,
θ
= 131°
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
4
PAE (%)
PAE (%)
8
48
Advance Product Information
June 8, 2005
Linear Model for 1mm Unit pHEMT cell
Rdg
Lg
Gate
Cgs
Rgs
R
i
+
Rds
gm
v
i
Cds
Rg
Cdg
Rd
Ld
Drain
TGF2021-01
v
i
-
VvÃC@HUÃpryy
Srsr
rprÃQyhr
Ls
Rp, Cp
Rs
Source
Gate
Drain
UPC
Source
Source
Source
L - via = 0.0135 nH (2x)
UPC = 1mm Unit pHEMT Cell
MODEL
PARAMETER
Rg
Rs
Rd
gm
Cgs
Ri
Cds
Rds
Cgd
Tau
Ls
Lg
Ld
Rgs
Rgd
Vd = 8V
Idq = 75mA
0.45
0.14
0.41
0.310
2.39
1.22
0.20
149.1
0.115
6.29
0.009
0.089
0.120
33000
349000
Vd = 8V
Idq = 100mA
0.45
0.14
0.43
0.318
2.58
1.19
0.201
152.3
0.107
6.63
0.009
0.089
0.120
33000
425000
Vd = 8V
Idq = 125mA
0.45
0.14
0.46
0.314
2.70
1.20
0.201
158.8
0.101
6.99
0.009
0.089
0.120
35100
405000
Vd = 10V
Idq = 75mA
0.45
0.17
0.41
0.296
2.61
1.24
0.198
171.8
0.101
7.19
0.009
0.089
0.120
28900
305000
Vd = 10V
Idq = 100mA
0.450
0.160
0.450
0.303
2.74
1.23
0.199
173.7
0.098
7.410
0.010
0.089
0.120
35700
366000
Vd = 12V
Idq = 75mA
0.45
0.19
0.410
0.286
2.72
1.27
0.196
187.9
0.096
7.79
0.010
0.089
0.120
24400
238000
UNITS
Ω
Ω
Ω
S
pF
Ω
pF
Ω
pF
pS
nH
nH
nH
Ω
Ω
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
5
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