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LNC704PS

Description
GaAlAs Semiconductor Laser
File Size27KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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LNC704PS Overview

GaAlAs Semiconductor Laser

Semiconductor Laser
LNC704PS
GaAlAs Semiconductor Laser
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
ø1.0 min.
Unit : mm
2
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
0.4±0.1
110˚±1˚
Features
LD
1
Junction plane
Reference plane
1.0±0.1
Reference slot
3
PD
2.3±0.2
1.27±0.07
0.25
Applications
Optical data processing devices
Optical disk memory
Optical measuring equipment
1.2±0.1
Reference plane
3-ø0.45
6.5±0.5
2
1
ø2.0
Bottom view
3
1: LD Anode
2: Common Case
3: PD Cathode
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Laser
PIN
Symbol
P
O
V
R
V
R
(PIN)
P
d
(PIN)
T
opr
T
stg
Ratings
40
2
30
100
–10 to +60
– 40 to +80
Unit
mW
V
V
mW
˚C
˚C
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation angle
Horizontal direction
Vertical direction
Symbol
I
th
I
OP
V
OP
λ
L
θ
//
*1
θ
*1
η
I
P
I
R
θ
X
θ
Y
CW
Conditions
CW P
O
= 32mW
CW P
O
= 32mW
CW P
O
= 32mW
CW P
O
= 32mW
CW P
O
= 32mW
CW P
O
= 29mW/I(32mW – 3mW)
CW P
O
= 32mW, V
R
(PIN) = 5V
V
R
(PIN) = 15V
CW P
O
= 32mW
CW P
O
= 32mW
min
10
30
770
7
20
0.7
typ
20
70
2.0
785
9
25
0.9
0.4
max
35
90
2.5
805
13
30
1.2
0.1
Unit
mA
mA
V
nm
deg.
deg.
W/A
mA
µA
deg.
deg.
Differential efficiency
PIN photo current
Reverse current (DC)
Optical axis
accuracy
*1
The
X direction
Y direction
–2.0
–3.0
+2.0
+3.0
radiation angle is indicated as half full angle.
1
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