AF70N03
N-Channel Enhancement Mode Power MOSFET
Features
-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-RoHS Compliant
-Pb Free Plating Product
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
I
D
(A)
60
Product Summary
BV
DSS
(V)
30
R
DS(ON)
(mΩ)
9
Pin Assignments
(Front View)
Pin Descriptions
Pin Name
3
2
1
D
G
S
Description
Source
Gate
Drain
S
G
D
Ordering information
A X
Feature
F :MOSFET
PN
70N03 X X
Package
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/5
AF70N03
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
=10V
Pulsed Drain Current
(Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=100ºC
T
A
=25ºC
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
2.8
110
Units
ºC/W
ºC/W
Electrical Characteristics
(T
J
=25ºC unless otherwise noted)
Symbol
BV
DSS
∆BV
DSS
/∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(T
J
=25ºC)
Drain-Source Leakage
Current(T
J
=175ºC)
Gate Source Leakage
Total Gate Charge
(Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25ºC,
I
D
=1mA
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
V
DS
= V
GS
, I
D
=250uA
V
DS
=10V, I
D
=33A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=33A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=33A
R
G
=3.3Ω, V
GS
=10V
R
D
=0.45Ω
V
GS
=0V
V
DS
=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.032
-
-
-
35
-
-
-
16.5
5
10.3
8.2
105
21.4
8.5
1485
245
170
Max.
-
-
9
18
3
-
1
uA
250
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
Unit
V
V/ºC
mΩ
V
S
nS
pF
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current (Body
Diode)
Pulsed Source Current (Body Diode)
(Note 1)
Test Conditions
V
D
=V
G
=0V, V
S
=1.3V
Min.
-
-
Typ.
-
-
-
Max.
60
195
1.3
Unit
A
A
V
Forward On Voltage
(Note 2)
T
J
=25ºC, I
S
=60A,
V
GS
=0V
-
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.0
Aug 10, 2005
AF70N03
N-Channel Enhancement Mode Power MOSFET
Note 1:
Pulse width limited by safe operating area.
Note 2:
Pulse width < 300us, duty cycle < 2%.
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
3/5
Rev. 1.0
Aug 10, 2005
AF70N03
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
4/5
Rev. 1.0
Aug 10, 2005
AF70N03
N-Channel Enhancement Mode Power MOSFET
Marking Information
TO-252
( Top View)
Logo
Part Number
70N03
YYWWX
YY : Year
WW: Nth week
X
: Internal code ( Optional)
Package Information
Package Type: TO-252
D
D1
E2
E3
B1
e
A2
e
R: 0.127~0.381
F1
A3
(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A2
A3
B1
D
D1
F
F1
E1
E2
E3
e
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.80
2.30
2.80
0.40
0.50
0.60
0.40
0.70
1.00
6.00
6.50
7.00
4.80
5.35
5.90
2.20
2.63
3.05
0.50
0.85
1.20
5.10
5.70
6.30
0.50
1.10
1.70
3.50
4.00
4.50
-
2.30
-
0.35
0.50
0.65
Anachip Corp.
www.anachip.com.tw
5/5
C
F
E1
Rev. 1.0
Aug 10, 2005
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