LN2SB60 datasheet, PDF - EEWORLD Datasheet

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LN2SB60: Description1.6 A, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size77KB，5 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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LN2SB60 Overview

1.6 A, SILICON, BRIDGE RECTIFIER DIODE

LN2SB60 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SHINDENGEN
Parts packaging code	SIP
package instruction	R-PSIP-T4
Contacts	4
Reach Compliance Code	unknow
Other features	LOW NOISE
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
JESD-30 code	R-PSIP-T4
JESD-609 code	e0
Humidity sensitivity level	2
Maximum non-repetitive peak forward current	120 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1.6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	240
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Maximum reverse recovery time	5 µs
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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SHINDENGEN

General Purpose Rectifiers

iLow

Noise Bridges

LN2SB60

600V 1.6A

FEATURES

●

Low noise

●

SIL package

●

Applicable to Automatic Insertion

OUTLINE DIMENSIONS

Case : 2S

Unit : mm

APPLICATION

●

Adapter

●

Switching power supply

●

Home Appliances, Office Equipment,

Telecommunication

RATINGS

●Absolute Maximum Ratings (If not specified Tl=25℃)

Item

Symbol

Conditions

Storage Temperature

Tstg

Operating Junction Temperature

Maximum Reverse Voltage

Average Rectified Forward Current

50Hz sine wave, R-load, On glass-epoxy substrate, Ta=25℃

Peak Surge Forward Current

FSM

50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃

Current Squared Time

1ms≦t＜10ms Tj=25℃

●Electrical Characteristics (If not specified Tl=25℃)

Item

Symbol

Conditions

Forward Voltage

=0.8A, Pulse measurement, Rating of per diode

Reverse Current

, Pulse measurement, Rating of per diode

Reverse Recovery Time

=0.1A, I

=0.1A, Rating of per diode

trr

Thermal Resistance

junction to lead

θjl

θja

junction to ambient

Ratings

-40∼150

150

600

1.6

120

Ratings

MAX 1.0

MAX 10

MAX 5

MAX 10

MAX 65

Unit

℃

Unit

μA

μs

℃/W

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