Infrared Light Emitting Diodes
LN189L
GaAlAs Infrared Light Emitting Diode
Unit : mm
Light source for distance measuring systems
Features
High-power output, high-efficiency : P
O
= 5.5 mW (typ.)
Fast response and high-speed modulation capability : t
r
, t
f
= 20 ns (typ.)
Infrared light emission close to monochromatic light :
λ
P
= 880 nm(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
0.75
0.35
5.0±0.3
6.0±0.3
3.4±0.2 3.0±0.2
4.0±0.15
1.0
0.6
1
0.4±0.1
3.0±0.15
,,
,
2
3.2±0.15
0.1 max.
1.0
Mark (Red)
0.38
0.6±0.1
0.2
Spherical lens
ø0.55±0.05
0.6±0.1
0.5±0.1
1.5±0.2
,,
,,,
0.15
Mini hollow mold resin package
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
190
100
0.2
3
–25 to +85
– 40 to +100
Unit
mW
mA
A
V
˚C
˚C
2.0±0.2
1.5
2.2±0.15
1: Anode
2: Cathode
f = 10 kHz, Duty cycle = 25 %
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
Precautions for Use
[Airtightness] This product is not structured to provide a complete air seal. Therefore it cannot be immersed in solutions for
purposes such as boiling tests or ultrasonic cleaning.
[Ability to withstand soldering heat]
The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore
this product cannot be put through automated soldering operations in which the ambient temperature exceeds
the specified temperature. The recommended soldering conditions are as follows.
· Temperature of soldering iron tip : 260˚C or less
: 300˚C or less
or
· Soldering time
: 5 seconds or less
: 1 second or less
· Soldering position
: At least 2 mm away from lead base
Symbol
P
O
λ
P
∆λ
V
F
I
R
t
r
t
f
θ
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
I
FP
= 100mA
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
3
typ
5.5
880
50
1.55
20
20
20
max
Unit
mW
nm
nm
1.9
10
V
µA
ns
ns
deg.
]
[Ability to withstand chemicals]
If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol.
If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or
a change in the condition of the case material.
1
LN189L
Infrared Light Emitting Diodes
I
F
— Ta
120
160
I
F
— V
F
1
Ta = 25˚C
140
I
FP
— V
F
t
w
= 10µs
f = 100Hz
Ta = 25˚C
I
F
(mA)
I
F
(mA)
120
100
80
60
40
20
Allowable forward current
80
Pulse forward current
Forward current
I
FP
(A)
10
–1
10
–2
0
100
60
40
20
0
– 25
0
20
40
60
80
100
0
0
0.5
1.0
1.5
2.0
1
2
3
4
5
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Forward voltage V
F
(V)
∆P
O
— I
F
10
3
(1) t
w
= 10µs
Duty = 0.1%
(2) t
w
= 50µs
Duty = 50%
(3) DC
Ta = 25˚C
(1)
10
(2)
(3)
1.8
V
F
— Ta
10
∆P
O
— Ta
I
F
= 100mA
Relative radiant power
∆P
O
V
F
(V)
10
2
I
F
= 100mA
1.4
Relative radiant power
∆P
O
1.6
Forward voltage
1
1
1.2
10mA
10
–1
1.0
1mA
10
–2
10
–3
10
–2
10
–1
1
10
0.8
– 40
0
40
80
120
10
–1
– 40
0
40
80
Forward current I
F
(A)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λ
P
— Ta
1000
I
F
= 100mA
100
Spectral characteristics
I
F
= 100mA
80
Directivity characteristics
0˚
100
90
80
10˚
20˚
Peak emission wavelength
λ
P
(nm)
900
Relative radiant intensity (%)
Relative radiant intensity (%)
30˚
60
70
60
50
800
40˚
50˚
60˚
70˚
80˚
90˚
40
40
30
700
20
20
600
– 40
0
40
80
120
0
780
820
860
900
940
980
1020
Ambient temperature Ta (˚C )
Wavelength
λ
(nm)
2
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