Infrared Light Emitting Diodes
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Features
High-power output, high-efficiency : P
O
= 5 mW (typ.)
Fast response and high-speed modulation capability : t
r
, t
f
= 20 ns(typ.)
Infrared light emission close to monochromatics light :
λ
P
= 880 nm
(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
4.5±0.2
2.0
(0.29)
,,,
ø4.6±0.15
1.0 max.
Unit : mm
Glass window
Spherical lens
12.7 min.
(0.4)
2-ø0.45±0.05
2
2.45±0.25
1
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Pulse
Symbol
P
D
I
F
I
FP
*
Ratings
190
90
230
3
–25 to +85
– 40 to +100
Unit
mW
mA
mA
V
˚C
˚C
ø4.0±0.1
ø5.75max.
1: Anode
2: Cathode
V
R
T
opr
T
stg
conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated
with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
Symbol
P
O
λ
P
∆λ
V
F
I
R
t
r
t
f
θ
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
I
FP
= 100mA
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
3.5
typ
880
50
1.55
20
20
20
max
Unit
mW
nm
nm
1.9
10
V
µA
ns
ns
deg.
1
LN184
Infrared Light Emitting Diodes
I
F
— Ta
120
160
I
F
— V
F
1
Ta = 25˚C
140
I
FP
— V
FP
t
w
= 10µs
f = 100Hz
Ta = 25˚C
I
F
(mA)
I
F
(mA)
120
100
80
60
40
20
Allowable forward current
80
Pulse forward current
Forward current
I
FP
(A)
10
–1
10
–2
0
100
60
40
20
0
– 25
0
20
40
60
80
100
0
0
0.5
1.0
1.5
2.0
1
2
3
4
5
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Pulse forward voltage V
FP
(V)
∆P
O
— I
FP
10
3
(1) t
w
= 10µs
Duty = 0.1%
(2) t
w
= 50µs
Duty = 50%
(3) DC
Ta = 25˚C
(1)
10
(2)
(3)
1
1.8
V
F
— Ta
10
∆P
O
— Ta
I
F
= 100mA
Relative radiant power
∆P
O
V
F
(V)
10
2
I
F
= 100mA
1.4
Relative radiant power
∆P
O
1.6
Forward voltage
1
1.2
10mA
10
–1
1.0
1mA
10
–2
10
–3
10
–2
10
–1
1
10
0.8
– 40
0
40
80
120
10
–1
– 40
0
40
80
Pulse forward current I
FP
(A)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λ
P
— Ta
1000
I
F
= 100mA
100
Spectral characteristics
I
F
= 100mA
80
Directivity characteristics
0˚
100
90
10˚
20˚
Peak emission wavelength
λ
P
(nm)
Relative radiant intensity (%)
900
80
70
Relative radiant intensity (%)
30˚
60
60
50
40
40˚
50˚
60˚
70˚
80˚
90˚
800
40
30
20
700
20
600
– 40
0
40
80
120
0
780
820
860
900
940
980
1020
Ambient temperature Ta (˚C )
Wavelength
λ
(nm)
2
Embedded System
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