D A T A S H E E T
Lighting
Imaging
Telecom
InGaAs PIN Photodiodes
High-Speed InGaAs PIN
C30616, C30637, C30617, C30618
InGaAs PIN Photodiodes
Description
These high-speed InGaAs photo-
diodes are designed for use in
O E M f i b e r- o p t i c c o m m u n i c a t i o n s
systems and high-speed receiver
applications including trunk
l i n e , L A N , f i b e r- i n - t h e - l o o p a n d
data communications. Ceramic
submount packages are available
for easy integration into high-
s p e e d S O N E T, F D D I , d a t a l i n k
receiver modules, or as back-
facet power monitors in laser
d i o d e m o d u l e s . Av a i l a b l e i n
hermetic TO-18 packages,
fibered packages, or in connec-
torized receptacle packages with
i n d u s t r y s t a n d a r d S T, F C o r S C
connectors, these photodiodes
are designed to function with
either single or multimode
fibers. Receptacled and fibered
packages use a ball-lens TO-18
package to maximize coupling
e f f i c i e n c y. A l l d e v i c e s a r e p l a n a r
passivated and feature proven
high reliability mounting and
contacting.
An MTTF of >109 hours
(approximately 105 years) at
50˚ C has been demonstrated to
d a t e f r o m standard production
samples.
Certified to meet ISO 9001,
PerkinElmer Optoelectronics is
committed to supplying the highest
quality products to our customers .
This series of receiver modules comply
to MIL-Q-9858A and AQAP-1 quality
standards. Process control is main-
tained through annual requalification
of production units and includes
extensive electrical, thermal and
mechanical stress, as well as an
extended life test. Additionally, every
wafer lot is individually qualified to
meet responsivity, capacitance and
dark current specifications. Reliability
is demonstrated with an extended high
temperature burn-in at 200˚ C for 168
hours (VR=10V), ensuring an MTTF >
107 hours at 50˚C (EA=0.7eV). Finally,
all production devices are screened
with a 16 hour, 200˚C burn-in (VR =
10V) and tested to meet responsivity,
spectral noise and dark current
specifications.
Applications
•
High-speed communications
•
SONET/ATM, FDDI
•
Datalinks and LANs
Features
•
50, 75, 100, 350 µm diameters
•
High responsivity at 1300 and
1550 nm
•
Low capacitance for high band-
widths (to 3.5 GHz)
•
Available in various packages
www.perkinelmer.com/opto
C30616, C30637, C30617, C30618
Specifications (at V R =V op typical), 22˚ C
PARAMETER
C30616
Min Typ Max
C30637
Min
1
25
Units
Max
10
V
V
µm
A/W
A/W
2.0
0.15
0.60
0.5
nA
pA/√Hz
pF
ns
GHz
Typ
5
60
75
Operating voltage
Breakdown voltage
Active diameter
Responsivity at 1300 nm Ceramic (Fig. 1)
Responsivity at 1550 nm Ceramic (Fig. 1)
Dark current
Spectral noise current (10 kHz, 1.0 Hz)
Capacitance at VR = VOP (typ) Ceramic (Fig. 1)
Rise-and-fall time (10% to 90%)
Bandwidth (-3 dB, RL = 50Ω )
Available package types: See corresponding
figures.
1
25
5
60
50
10
0.80
0.85
0.90
0.95
<1.0
2.0
0.80
0.85
0.90
0.95
<1.0
<0.02
0.40
0.07
<0.02 0.15
0.35
0.07
2.5
3.5
1
0.55
0.5
2.5
3.5
1
Maximum Ratings
Min
Maximum forward current
Power dissipation
Storage temperature
Operating temperature
-60
-40
Typ
Max
10
100
125
125
Min
Typ
Max
10
100
Units
mA
mW
˚C
˚C
-60
-40
125
125
01-013:150202/2
www.perkinelmer.com/opto
C30616, C30637, C30617, C30618
Specifications (at V R =V op typical), 22˚ C
PARAMETER
C30617
Min Typ Max
C30618
Min
1
25
Units
Max
10
V
V
µm
Typ
5
60
350
Operating voltage
Breakdown voltage
Active diameter
Responsivity at 1300 nm:
Ceramic (Fig. 1)/ TO - 18 (Fig. 3)
Fiber (Fig. 7)ST, FC, SC Receptacles (Fig. 4, 5 & 6) 1
Responsivity at 1550 nm :
Ceramic (Fig.1)/TO-18 (Fig. 3)
Fiber (Fig. 7)/ST, FC, SC Receptacles (Fig. 4, 5 & 6) 1
Dark current
Spectral noise current (10 kHz, 1.0 Hz)
Capacitance at VR = VOP (typ)
Figures 1,3,4,5,6 & 7
TO-18 (Fig. 3)
Rise-and-Fall time (10% to 90%)
Bandwidth (-3 dB, RL = 50Ω )
Available package types: See corresponding
figures
1
25
5
60
100
10
0.80
0.65
0.90
0.75
0.80
0.65
0.90
0.75
A/W
0.85
0.70
0.95
0.80
<1.0
<0.02
2.0
0.15
0.85
0.70
0.95
0.80
2.0
0.02
5.0
0.20
A/W
nA
pA/√Hz
0.6
0.8
0.07
2.0
3.5
0.8
1.0
0.5
4.0
4.0
0.5
0.75
6.0
6.0
1.0
pF
pF
ns
GHz
1,3,4,5,6,7
2,4,5,6
Maximum Ratings
Min
Maximum forward current
Power dissipation
Storage temperature 2
Operating temperature 2
-60
-40
Typ
Max
10
100
125
125
-60
-40
Min
Typ
Max
10
100
125
125
Units
mA
mW
˚C
˚C
Note 1. Coupled from 62.5 µm, 0.28 NA graded index multi-mode fiber using 1300 nm SLED source.
Responsivity is 10% higher with 9µm fiber.
Note 2. Maximum storage and operating temperature for connectorized and fibered devices is +85˚ C
01-013:150202/3
www.perkinelmer.com/opto
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