Transistors
2SB0643, 2SB0644
(2SB643, 2SB644)
Silicon PNP epitaxial planar type
For low-frequency general amplification
■
Features
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9
±0.1
(0.4)
Unit: mm
2.5
±0.1
(1.0)
(1.0)
3.5
±0.1
2.0
±0.2
2.4
±0.2
(1.5)
(1.5)
R 0.9
R 0.7
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB0643
2SB0644
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
−30
−60
−25
−50
−7
−
0.5
−1
600
150
−55
to
+150
V
A
A
mW
°C
°C
3
(2.5)
2
(2.5)
1
Unit
V
1.0
±0.1
(0.85)
0.45
±0.05
1.25
±0.05
0.55
±0.1
Collector-emitter voltage 2SB0643
(Base open)
2SB0644
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
1: Base
2: Collector
3: Emitter
M-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0643
2SB0644
2SB0643
2SB0644
V
EBO
I
CBO
I
CEO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2003
SJC00046CED
*1
Symbol
V
CBO
V
CEO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
CE
= −10
V, I
C
= −10
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−30
−60
−25
−50
−7
Typ
Max
Unit
V
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-Emitter cutoff current (Base open)
Forward current transfer ratio
*1
V
−
0.1
−1
µA
µA
−
0.6
15
V
MHz
pF
85
40
90
−
0.35
200
6
340
V
CE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4.1
±0.2
4.5
±0.1
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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