Transistors
2SB0643, 2SB0644
(2SB643, 2SB644)
Silicon PNP epitaxial planar type
For low-frequency general amplification
■
Features
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9
±0.1
(0.4)
Unit: mm
2.5
±0.1
(1.0)
(1.0)
3.5
±0.1
2.0
±0.2
2.4
±0.2
(1.5)
(1.5)
R 0.9
R 0.7
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB0643
2SB0644
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
−30
−60
−25
−50
−7
−
0.5
−1
600
150
−55
to
+150
V
A
A
mW
°C
°C
3
(2.5)
2
(2.5)
1
Unit
V
1.0
±0.1
(0.85)
0.45
±0.05
1.25
±0.05
0.55
±0.1
Collector-emitter voltage 2SB0643
(Base open)
2SB0644
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
1: Base
2: Collector
3: Emitter
M-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0643
2SB0644
2SB0643
2SB0644
V
EBO
I
CBO
I
CEO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2003
SJC00046CED
*1
Symbol
V
CBO
V
CEO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
CE
= −10
V, I
C
= −10
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−30
−60
−25
−50
−7
Typ
Max
Unit
V
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-Emitter cutoff current (Base open)
Forward current transfer ratio
*1
V
−
0.1
−1
µA
µA
−
0.6
15
V
MHz
pF
85
40
90
−
0.35
200
6
340
V
CE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4.1
±0.2
4.5
±0.1
1
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and semiconductors described in this material
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electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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