LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
LOW POWER, BANDGAP VOLTAGE REFERENCES
FEATURES
s
s
Output Tolerance ....................................... 1% or 2%
Output Voltage Option
LM285/385-1.2V ........................................ 1.235V
LM285/385-2.5V ............................................ 2.5V
Wide Operating Current Range
LM285/385-1.2V ........................... 15
µ
A to 20mA
LM285/385-2.5V ........................... 20
µ
A to 20mA
Temperature Coefficient .......................... 30ppm/
°
C
Dynamic Impedance .......................................... 0.6
Ω
TO-92-3 Plastic Package
8-Pin Plastic Narrow Body (SOIC) Package
1
GENERAL DESCRIPTION
The LM285/385-1.2V (1.235V output) and LM285/385-
2.5V (2.5V output) are bipolar, two-terminal, bandgap volt-
age references that offer precision performance without
premium price. These devices do not require thin-film re-
sistors, greatly lowering manufacturing complexity and cost.
A 30ppm/°C output temperature coefficient and a 15µA
to 20mA operating current range make these voltage refer-
ences especially attractive for multimeter, data acquisition
and telecommunications applications.
PIN CONFIGURATIONS
TO-92-3 PLASTIC
(BOTTOM VIEW)
SURFACE MOUNT
8-PIN PLASTIC SOIC
NC
NC
NC
1
2
3
8
7
6
5
CATHODE
NC
NC
NC
2
s
3
s
s
s
s
APPLICATIONS
s
s
s
s
s
ADC and DAC Reference
Current Source Generation
Threshold Detectors
Power Supplies
Multi-meters
3
2
1
4
ANODE 4
LM285/285B EZB-1.2
LM285/285B EZB-2.5
LM385/385B CZB-1.2
LM385/385B CZB-2.5
LM285/285B E0A-1.2
LM285/285B EOA-2.5
LM385/385B COA-1.2
LM385/385B COA-2.5
5
NC = NO INTERNAL CONNECTION
ORDERING INFORMATION
Part No.
LM285BEOA-1.2
LM285BEOA-2.5
LM285BEZB-1.2
LM285BEZB-2.5
LM285EOA-1.2
LM285EOA-2.5
LM285EZB-1.2
LM285EZB-2.5
LM385BCOA-1.2
LM385BCOA-2.5
LM385BCZB-1.2
LM385BCZB-2.5
LM385COA-1.2
LM385COA-2.5
LM385CZB-1.2
LM385CZB-2.5
Package
8-Pin SOIC
8-Pin SOIC
TO-92-3
TO-92-3
8-Pin SOIC
8-Pin SOIC
TO-92-3
TO-92-3
8-Pin SOIC
8-Pin SOIC
TO-92-3
TO-92-3
8-Pin SOIC
8-Pin SOIC
TO-92-3
TO-92-3
Temperature
Range
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
Voltage
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
Tolerance
1%
1.5%
1%
1.5%
2%
3%
2%
3%
1%
1.5%
1%
1.5%
2%
3%
2%
3%
LM285/B/385/B-9 11/6/96
6
7
8
3-9
TELCOM SEMICONDUCTOR, INC.
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
ABSOLUTE MAXIMUM RATINGS*
Forward Current .................................................... +10mA
Reverse Current .................................................... +30mA
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature Range
TO-92 Package ................................ – 40°C to +85°C
Surface Mount Package ................... – 40°C to +85°C
LOW POWER, BANDGAP
VOLTAGE REFERENCES
Lead Temperature (Soldering, 10 sec)
TO-92 Package .............................................. +300°C
Surface Mount Package ................................. +300°C
Power Dissipation
Limited by Forward/Reverse Current
*Functional operation above the absolute maximum stress ratings is not
implied.
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C, unless otherwise specified.
Symbol
V
(BR)R
Parameter
Reverse Breakdown Voltage
LM285B-1.2/LM385B-1.2
T
A
= T
low
to T
high
(Note 1)
LM285-1.2V/LM385-1.2V
T
A
= T
low
to T
high
(Note 1)
Minimum Operating Current
T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Breakdown Voltage
Change with Current
I
Rmin
= I
R
= 1.0mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
1.0mA = I
R
= 20mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Dynamic Impedance
Average Temperature Coefficient
Long Term Stability
Test Conditions
I
R
≤
20mA
LM285 / LM285B–1.2
Min
Typ Max
1.223
1.200
1.205
1.192
—
—
1.235
—
1.235
—
8.0
—
1.247
1.270
1.260
1.273
15
20
LM385 / LM385B–1.2
Min
Typ Max
1.223
1.210
1.205
1.192
—
—
1.235
—
1.235
—
8.0
—
1.247
1.260
1.260
1.273
Unit
V
I
RMIN
µA
15
20
mV
—
—
—
—
—
—
—
—
—
—
—
0.6
30
20
1.0
1.5
10
20
—
100
—
—
—
—
—
—
—
—
—
—
—
—
0.6
30
20
1.0
1.5
20
25
—
100
—
∆V
(BR)R
Z
∆V
(BR)
/∆T
S
I
R
= 100µA
10µA
≤
I
R
≤
20mA
I
R
= 100µA,
T
A
= +25°C
±0.1°C
Ω
ppm/°C
ppm/kHR
Symbol
V
(BR)R
Parameter
Reverse Breakdown Voltage
LM285B-2.5/LM385B-2.5
T
A
= T
low
to T
high
(Note 1)
LM285-2.5V/LM385-2.5V
T
A
= T
low
to T
high
(Note 1)
Minimum Operating Current
T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Breakdown Voltage
Change with Current
I
Rmin
= I
R
= 1.0mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
1.0mA = I
R
= 20mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Dynamic Impedance
Average Temperature Coefficient
Long Term Stability
Test Conditions
I
R
= 20mA
LM285 / LM285B–2.5
Min
Typ Max
2.462
2.415
2.425
2.400
—
—
2.5
—
2.5
—
13
—
2.538
2.585
2.575
2.600
20
30
LM385 / LM385B–2.5
Min
Typ Max
2.462
2.436
2.425
2.400
—
—
2.5
—
2.5
—
13
—
2.538
2.564
2.575
2.600
Unit
V
I
RMIN
µA
20
30
mV
—
—
—
—
—
—
—
—
—
—
—
0.6
30
20
1.0
1.5
10
20
—
100
—
—
—
—
—
—
—
—
—
—
—
—
0.6
30
20
2.0
2.5
20
25
—
100
—
∆V
(BR)R
Z
∆V
(BR)
/∆T
S
I
R
= 100µA
20µA
≤
I
R
≤
20mA
I
R
= 100µA,
T
A
= +25°C
±0.1°C
Ω
ppm/°C
ppm/kHR
Note: 1. T
low
= – 40°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
T
high
= +85°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
3-10
TELCOM SEMICONDUCTOR, INC.
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
1
TYPICAL APPLICATIONS
10V Reference
+15V
3
+
7
6
2
TC911
–
2.5V
4
V
OUT
= 10V
Battery Powered 1.25V Reference
Precision Current Source
2
50 kΩ
+9V
LM285/385-1.2V
360 kΩ
1.25V
81 kΩ
2
+15V
–
7
1 µF
3
R
SET
LM285/385
-2.5V
60 kΩ
6
180 kΩ
LM285/385-1.2V
0.1 µF
3
TC911
+
4
I
OUT
= 1.25V
R
SET
4
RESPONSE TIME TEST CIRCUIT
36 kΩ
OUTPUT
INPUT
5
LM285/385-1.2V
LM285/385-2.5V
6
7
8
TELCOM SEMICONDUCTOR, INC.
3-11
PRELIMINARY INFORMATION
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
TYPICAL CHARACTERISTICS
LM285/385-1.2V: Output Voltage vs
Reverse Current
1000
OUTPUT VOLTAGE CHANGE (mV)
REVERSE CURRENT (µA)
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/385-1.2V: Output Voltage Change
vs Reverse Current
10
FORWARD VOLTAGE (V)
1.2
TA = +25°C
8
1.0
0.8
0.6
0.4
0.2
LM285/385-1.2V: Forward Voltage vs
Forward Current
TA = +25°C
TA = +25°C
100
6
10
4
1
2
0
0.01
0.1
0
0.25 0.5 0.75 1.0 1.25
OUTPUT VOLTAGE (V)
LM285/385-1.2V
Response Time
1.5
0.1
1
10
REVERSE CURRENT (mA)
100
0
0.01
0.1
1
10
FORWARD CURRENT (mA)
100
LM285/385-2.5V: Output Voltage vs
Reverse Current
1000
REVERSE CURRENT (µA)
10.0
TA = +25°C
5.0
INPUT
VOLTAGE (V)
0
1.5
1.0
0.5
0
0
200
400
TIME (µsec)
600
OUTPUT
LM285/385-2.5V: Output Voltage Change
vs Reverse Current
10
OUTPUT VOLTAGE CHANGE (mV)
TA = +25°C
100
8
TA = +25°C
6
10
4
1
2
0.1
0
0.5
1.0
1.5
2.0
2.5
OUTPUT VOLTAGE (V)
LM285/385-2.5V
Response Time
TA = +25°C
INPUT
3.0
0
0.01
0.1
1
10
REVERSE CURRENT (mA)
100
LM285/385-2.5V: Forward Voltage vs
Forward Current
1.2
TA = +25°C
FORWARD VOLTAGE (V)
1.0
0.8
0.6
0.4
0.2
0
0.01
VOLTAGE (V)
10
5
0
3
2
1
0
0
OUTPUT
0.1
1
10
FORWARD CURRENT (mA)
100
200
400
TIME (µsec)
600
3-12
TELCOM SEMICONDUCTOR, INC.
Embedded System
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