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5SLX12L2505

Description
Rectifier Diode, 1 Phase, 1 Element, 100A, 2500V V(RRM), Silicon, 12.40 X 12.40 MM, DIE-1
CategoryDiscrete semiconductor    diode   
File Size78KB,2 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SLX12L2505 Overview

Rectifier Diode, 1 Phase, 1 Element, 100A, 2500V V(RRM), Silicon, 12.40 X 12.40 MM, DIE-1

5SLX12L2505 Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionS-XUUC-N1
Contacts1
Reach Compliance Codecompli
ECCN codeEAR99
applicationFAST SOFT RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeS-XUUC-N1
Number of components1
Phase1
Number of terminals1
Maximum output current100 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2500 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Base Number Matches1
V
CE
I
F
=
=
2500 V
100 A
Diode-Die
5SLX12L2505
Die size: 12.4 * 12.4mm
Doc. No. 5SYA1654-01 Aug. 01
Fast Recovery Low losses
Soft reverse recovery
• •
Maximum Rated Values
Parameter
Max Reverse Voltage
DC Forward Current
Symbol
V
RRM
I
F
(T
j
= 25°C, unless specified otherwise)
Conditions
Values
2500
100
Unit
V
A
Diode Characteristic Values
Parameter
Forward Voltage
Anode-Cathode leakage current
Symbol
V
F
I
RRM
(T
j
= 25°C, unless specified otherwise)
Conditions
I
F
= 50 A
V
R
= V
RRM
, T
vj
=125 °C
min. typ. max. Unit
1.4
2
3
V
mA
Mechanical Characteristics
Parameter
Overall die
Dimensions
L*W
12.4 * 12.4
9.9 * 9.9
290 +/- 20
AISi1/Al
AISi1 / Ti / Ni / Ag
12
3
Exposed
L*W
Front metal
Thickness
Metallization
Front
Back
Unit
mm
mm
µm
µm
µm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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