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IRFE310

Description
1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size168KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRFE310 Overview

1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET

IRFE310 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CQCC-N18
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)0.82 mJ
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)1.2 A
Maximum drain-source on-resistance3.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CQCC-N18
Number of components1
Number of terminals18
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)4.8 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD-91782C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
SURFACE MOUNT (LCC-18)
®
IRFE310
JANTX2N6786U
JANTXV2N6786U
400V, N-CHANNEL
REF:MIL-PRF-19500/556
Product Summary
Part Number
IRFE310
B
VDSS
400V
R
DS(on)
3.6Ω
I
D
1.25A
LCC-18
The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board density.
International Rectifier has engineered the LCC package
to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.
Features:
n
n
n
n
n
n
n
n
n
Surface Mount
Small Footprint
Alternative to TO-39 Package
Hermetically Sealed
Dynamic dv/dt Rating
Avalanche Energy Rating
Simple Drive Requirements
Light Weight
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
1.25
0.80
5.5
15
0.12
±20
34
1.25
1.5
2.8
-55 to 150
°C
300 (for 5 S)
0.42 (typical)
g
A
W
W/°C
V
mJ
A
mJ
V/ns
Units
www.irf.com
1
05/15/15

IRFE310 Related Products

IRFE310 IRFE310PBF
Description 1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET Power Field-Effect Transistor, 1.2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it lead-free? Contains lead Lead free
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-CQCC-N18 CHIP CARRIER, R-CQCC-N18
Reach Compliance Code unknown compli
Other features HIGH RELIABILITY HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 0.82 mJ 0.82 mJ
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 400 V 400 V
Maximum drain current (ID) 1.2 A 1.2 A
Maximum drain-source on-resistance 3.6 Ω 3.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CQCC-N18 R-CQCC-N18
Number of components 1 1
Number of terminals 18 18
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 4.8 A 4.8 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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