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2N3728

Description
Small Signal Bipolar Transistor, 30V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, TO-78, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,1 Pages
ManufacturerRaytheon Company
Websitehttps://www.raytheon.com/
Download Datasheet Parametric Compare View All

2N3728 Overview

Small Signal Bipolar Transistor, 30V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, TO-78, 8 PIN

2N3728 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionTO-78, 8 PIN
Reach Compliance Codeunknown
Collector-emitter maximum voltage30 V
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-78
JESD-30 codeO-MBCY-W8
JESD-609 codee0
Number of components2
Number of terminals8
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.45 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1

2N3728 Related Products

2N3728 2N3726
Description Small Signal Bipolar Transistor, 30V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, TO-78, 8 PIN Small Signal Bipolar Transistor, 0.3A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, TO-78, 8 PIN
Is it Rohs certified? incompatible incompatible
package instruction TO-78, 8 PIN TO-78, 8 PIN
Reach Compliance Code unknown unknown
Collector-emitter maximum voltage 30 V 45 V
Minimum DC current gain (hFE) 80 135
JEDEC-95 code TO-78 TO-78
JESD-30 code O-MBCY-W8 O-MBCY-W8
JESD-609 code e0 e0
Number of components 2 2
Number of terminals 8 8
Maximum operating temperature 175 °C 175 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 0.45 W 0.4 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 200 MHz

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