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2N3150

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size381KB,1 Pages
ManufacturerSilicon Transistor Corp.oration
Download Datasheet Parametric Compare View All

2N3150 Overview

Transistor

2N3150 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)70 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)300 W
surface mountNO
Nominal transition frequency (fT)0.1 MHz
Base Number Matches1

2N3150 Related Products

2N3150 2N2660 2N1039 2N6046 2N2567 2N1040
Description Transistor Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN Transistor Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN
package instruction , CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 , CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 70 A 3 A 3 A 20 A 3 A 3 A
Configuration Single SINGLE SINGLE Single SINGLE SINGLE
Minimum DC current gain (hFE) 10 30 20 20 20 20
Maximum operating temperature 175 °C 100 °C 100 °C 200 °C 100 °C 100 °C
Polarity/channel type NPN PNP PNP NPN PNP PNP
Maximum power dissipation(Abs) 300 W 15 W 20 W 114 W 20 W 20 W
surface mount NO NO NO NO NO NO
Nominal transition frequency (fT) 0.1 MHz 0.28 MHz 0.225 MHz 30 MHz 0.225 MHz 0.225 MHz
Base Number Matches 1 1 1 1 1 1
Is it Rohs certified? - incompatible incompatible - incompatible incompatible
Parts packaging code - TO-5 TO-5 - TO-5 TO-5
Contacts - 3 3 - 3 3
ECCN code - EAR99 EAR99 - EAR99 EAR99
Collector-emitter maximum voltage - 40 V 40 V - 60 V 50 V
JEDEC-95 code - TO-5 TO-5 - TO-5 TO-5
JESD-30 code - O-MBCY-W3 O-MBCY-W3 - O-MBCY-W3 O-MBCY-W3
JESD-609 code - e0 e0 - e0 e0
Number of components - 1 1 - 1 1
Number of terminals - 3 3 - 3 3
Package body material - METAL METAL - METAL METAL
Package shape - ROUND ROUND - ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified - Not Qualified Not Qualified
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - WIRE WIRE - WIRE WIRE
Terminal location - BOTTOM BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials - GERMANIUM GERMANIUM - GERMANIUM GERMANIUM

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