2N6046 datasheet, PDF - EEWORLD Datasheet

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2N6046: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size381KB，1 Pages; ManufacturerSilicon Transistor Corp.oration

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2N6046 Overview

Transistor

2N6046 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	20 A
Configuration	Single
Minimum DC current gain (hFE)	20
Maximum operating temperature	200 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	114 W
surface mount	NO
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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2N6046 Related Products

	2N6046	2N2660	2N1039	2N3150	2N2567	2N1040
Description	Transistor	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN	Transistor	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN
package instruction	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	20 A	3 A	3 A	70 A	3 A	3 A
Configuration	Single	SINGLE	SINGLE	Single	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	30	20	10	20	20
Maximum operating temperature	200 °C	100 °C	100 °C	175 °C	100 °C	100 °C
Polarity/channel type	NPN	PNP	PNP	NPN	PNP	PNP
Maximum power dissipation(Abs)	114 W	15 W	20 W	300 W	20 W	20 W
surface mount	NO	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	30 MHz	0.28 MHz	0.225 MHz	0.1 MHz	0.225 MHz	0.225 MHz
Base Number Matches	1	1	1	1	1	1
Is it Rohs certified?	-	incompatible	incompatible	-	incompatible	incompatible
Parts packaging code	-	TO-5	TO-5	-	TO-5	TO-5
Contacts	-	3	3	-	3	3
ECCN code	-	EAR99	EAR99	-	EAR99	EAR99
Collector-emitter maximum voltage	-	40 V	40 V	-	60 V	50 V
JEDEC-95 code	-	TO-5	TO-5	-	TO-5	TO-5
JESD-30 code	-	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3
JESD-609 code	-	e0	e0	-	e0	e0
Number of components	-	1	1	-	1	1
Number of terminals	-	3	3	-	3	3
Package body material	-	METAL	METAL	-	METAL	METAL
Package shape	-	ROUND	ROUND	-	ROUND	ROUND
Package form	-	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	WIRE	WIRE	-	WIRE	WIRE
Terminal location	-	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	-	GERMANIUM	GERMANIUM	-	GERMANIUM	GERMANIUM

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