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2KBP02M

Description
Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerGeneral Instrument Corp
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2KBP02M Overview

Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon,

2KBP02M Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current0.000005 µA
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1

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Description Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 4 4 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4 4 4
Maximum operating temperature 165 °C 165 °C 165 °C 165 °C 165 °C 165 °C 165 °C 165 °C 165 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 600 V 1000 V 100 V 50 V 200 V 400 V 800 V 50 V
Maximum reverse current 0.000005 µA 0.000005 µA 5 µA 0.000005 µA 0.000005 µA 0.000005 µA 5 µA 5 µA 0.000005 µA
surface mount NO NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Base Number Matches 1 1 1 1 1 1 - - -
Maker - - - General Instrument Corp General Instrument Corp General Instrument Corp General Instrument Corp General Instrument Corp General Instrument Corp
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