
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | FLANGE MOUNT, S-CDFM-F2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| Other features | WITH EMITTER BALLASTING RESISTORS |
| Shell connection | BASE |
| Maximum collector current (IC) | 1.9 A |
| Configuration | SINGLE |
| highest frequency band | S BAND |
| JESD-30 code | S-CDFM-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 70 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
