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PH2729-110M

Description
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    The transistor   
File Size103KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
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PH2729-110M Overview

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

PH2729-110M Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codecompliant
Other featuresWITH EMITTER BALLASTING RESISTORS
Shell connectionBASE
Maximum collector current (IC)15 A
ConfigurationSINGLE
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)500 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
PH2729-110M
Radar Pulsed Power Transistor
110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
M/A-COM Products
Released, 29 Jun 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
STG
T
J
Rating
63
3.0
8.0
330
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Frequency
Symbol
BV
CES
I
CES
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
R
TH(JC)
P
OUT
G
P
Min
63
-
-
110
6.8
35
-
-
-
Max
-
7.5
0.3
-
-
-
-6
2:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
Collector-Emitter Breakdown Voltage I
C
= 50mA
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
V
CE
= 36V
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
η
C
RL
VSWR-T
VSWR-S
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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