AH210-74 datasheet, PDF - EEWORLD Datasheet

AH210-74: DescriptionVariable Capacitance Diode, Very High Frequency to KA Band, 9.5pF C(T), 15V, Gallium Arsenide, Hyperabrupt; CategoryDiscrete semiconductor diode; File Size179KB，4 Pages; ManufacturerThales Group

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AH210-74 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 9.5pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Parameter Name	Attribute value
package instruction	O-XEMW-F2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	15 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Nominal diode capacitance	9.5 pF
Diode component materials	GALLIUM ARSENIDE
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO KA BAND
JESD-30 code	O-XEMW-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	MICROWAVE
Certification status	Not Qualified
minimum quality factor	1500
Maximum reverse current	0.1 µA
Reverse test voltage	10 V
surface mount	YES
Terminal form	FLAT
Terminal location	END
Varactor Diode Classification	HYPERABRUPT
Base Number Matches	1

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