TC7S66F/FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7S66F,TC7S66FU
Bilateral Switch
The TC7S66 is a high Speed C
2
MOS Bilateral Switch fabricated
with silicon gate C
2
MOS technology.
It consists of a high speed switch capable of controlling either
digital or analog signals while maintaining the C
2
MOS low power
dissipation.
Control input (C) is provided to control the switch.
The switch turns ON while the C input is high, and the switch
turns OFF while low.
Input is equipped with protection circuits against static
discharge or transient excess voltage.
TC7S66F
Features
•
•
•
•
•
•
High speed: t
pd
=
7 ns (typ.) @V
CC
=
5 V
Low power dissipation: I
CC
=
1
μA
(max) @Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Low ON resistance: R
ON
=
100
Ω
(typ.) @V
CC
=
9 V
Low T.H.D: THD
=
0.05% (typ.) @V
CC
=
5 V
Pin and function compatible with TC4S66F
TC7S66FU
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
DC Supply voltage
Control input voltage
Switch I/O voltage
Control diode current
Output diode current
Through I/O current
DC V
CC
/ground current
Power dissipation
Storage temperature range
Lead temperature (10 s)
Symbol
V
CC
V
IN
V
I/O
I
CK
I
OK
I
T
I
CC
P
D
T
stg
T
L
Rating
−0.5
to 13
−0.5
to V
CC
+
0.5
−0.5
to V
CC
+
0.5
±20
±20
±12.5
±25
200
−65
to 150
260
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-30
TC7S66F/FU
AC Electrical Characteristics
(C
L
=
50 pF, input t
r
=
t
f
=
6 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
2.0
Phase difference between
input and output
φI-O
⎯
4.5
9.0
12.0
2.0
Output enable time
t
pZL
t
pZH
R
L
=
1 kΩ
4.5
9.0
12.0
2.0
Output disable time
t
pLZ
t
pHZ
R
L
=
1 kΩ
4.5
9.0
12.0
2.0
Maximum control input
frequency
⎯
R
L
=
1 kΩ
C
L
=
15 pF
V
OUT
=
1/2 V
CC
⎯
⎯
⎯
(Note)
4.5
9.0
12.0
Control input capacitance
Switch terminal
capacitance
Feedthrough capacitance
Power dissipation
capacitance
C
IN
C
I/O
C
IOS
C
PD
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
20
7
4
4
20
13
9
8
40
11
10
9
30
30
30
30
5
6
0.5
15
Max
75
15
12
11
150
30
18
18
170
35
30
27
⎯
⎯
⎯
⎯
10
⎯
⎯
⎯
Ta
= −40
to 85°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
100
20
15
14
190
38
33
27
220
44
38
33
⎯
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
pF
⎯
⎯
MHz
ns
ns
ns
Unit
Note: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
=
C
PD
• V
CC
• f
IN
+
I
CC
Analog Switch Characteristics
(GND
=
0 V, Ta
=
25°C) (Note)
Characteristics
Symbol
Test Condition
V
CC
(V)
Total harmonic distortion (T.H.D)
⎯
f
IN
=
1 kHz, V
IN
=
4 V
pp
(V
CC
=
4.5 V)
R
L
=
10 kΩ, V
IN
=
8 V
pp
(V
CC
=
9.0 V)
C
L
=
50 pF
Adjust f
IN
voltage to obtain 0dBm at V
OS
increase f
IN
frequency until dB meter reads
−3dB.
R
L
=
50
Ω,
C
L
=
10 pF
f
IN
=
1 MHz, Sine wave
V
IN
is centered at V
CC
/2 adjust input for 0dBm
R
L
=
600
Ω,
C
L
=
50 pF
f
IN
=
1 MHz, Sine wave
R
L
=
600
Ω,
C
L
=
50 pF
f
IN
=
1 MHz, Pulse (t
r
=
t
f
=
6 ns)
4.5
9.0
4.5
9.0
4.5
9.0
4.5
9.0
0.05
0.04
200
MHz
200
−60
dB
−60
60
100
mV
%
Typ.
Unit
Maximum propagation frequency
(switch on)
f
MAX
Feedthrough (switch on)
⎯
Crosstalk (control switch)
⎯
Note: These characteristics are determined by design of devices.
4
2009-09-30
Microcontroller MCU
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