HYMD264726C8-H datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > storage> storage> HYMD264726C8-H

HYMD264726C8-H: DescriptionDDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184; Categorystorage storage; File Size194KB，16 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

Download Datasheet Parametric Compare View All

HYMD264726C8-H Overview

DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184

HYMD264726C8-H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	4831838208 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.36 A
Maximum slew rate	3.195 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

Preview

Download Datasheet

View All

64Mx72 bits

Unbuffered DDR SDRAM DIMM

HYMD264726C(L)8-M/K/H/L

DESCRIPTION

Hynix HYMD264726C(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line

Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264726C(L)8-M/K/

H/L series consists of eighteen 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.

Hynix HYMD264726C(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of

industry standard. It is suitable for easy interchange and addition.

Hynix HYMD264726C(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs

are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-

ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.

All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and

burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD264726C(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

512MB (64M x 72) Unbuffered DDR DIMM based on

32Mx8 DDR SDRAM

JEDEC Standard 184-pin dual in-line memory module

(DIMM)

Error Check Correction (ECC) Capability

2.5V +/- 0.2V VDD and VDDQ Power supply

All inputs and outputs are compatible with SSTL_2

interface

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

•

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

Data inputs on DQS centers when write (centered

DQ)

Data strobes synchronized with output data for read

and input data for write

Programmable CAS Latency 2 / 2.5 supported

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192refresh cycles / 64ms

ORDERING INFORMATION

Part No.

HYMD264726C(L)8-M

HYMD264726C(L)8-K

HYMD264726C(L)8-H

HYMD264726C(L)8-L

=2.5V

DDQ

=2.5V

Power Supply

Clock Frequency

133MHz (*DDR266:2-2-2)

133MHz (*DDR266A)

Interface

Form Factor

SSTL_2

133MHz (*DDR266B)

100MHz (*DDR200)

184pin Unbuffered DIMM

5.25 x 1.25 x 0.15 inch

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.1 / Mar. 2003

HYMD264726C8-H Related Products

	HYMD264726C8-H	HYMD264726C8-K	HYMD264726C8-L
Description	DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 64MX72, 0.8ns, CMOS, DIMM-184
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184
Contacts	184	184	184
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
memory density	4831838208 bit	4831838208 bit	4831838208 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	184	184	184
word count	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	64MX72	64MX72	64MX72
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM184	DIMM184	DIMM184
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192
self refresh	YES	YES	YES
Maximum standby current	0.36 A	0.36 A	0.36 A
Maximum slew rate	3.195 mA	3.195 mA	2.97 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1

Recommended Resources

A STM32F103F103 and resistive touch screen interface circuit diagram

Forward rotation control circuit with self-locking

Monostable circuit composed of LM324

Protector circuit diagram of rectified power supply

Positive wave circuit using 400Hz light emitting diode and operational amplifier

MG45 photoresistor parameter table

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components