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2N6330

Description
Power Bipolar Transistor, 30A I(C), PNP
CategoryDiscrete semiconductor    The transistor   
File Size69KB,1 Pages
ManufacturerSilicon Transistor Corp.oration
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2N6330 Overview

Power Bipolar Transistor, 30A I(C), PNP

2N6330 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)30 A
ConfigurationSingle
Minimum DC current gain (hFE)6
JESD-609 codee0
Maximum operating temperature200 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)114 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)3 MHz
Base Number Matches1
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