2C6661 datasheet, PDF - EEWORLD Datasheet

2C6661: DescriptionPower Field-Effect Transistor, 0.4A I(D), 90V, 5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size40KB，1 Pages; ManufacturerSilicon Transistor Corp.oration

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2C6661 Overview

Power Field-Effect Transistor, 0.4A I(D), 90V, 5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
package instruction	UNCASED CHIP, X-XUUC-N
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	90 V
Maximum drain current (ID)	0.4 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	X-XUUC-N
Number of components	4
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Transistor component materials	SILICON
Base Number Matches	1

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